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Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film

A solar cell, silicon nitride reduction technology, applied in coatings, circuits, electrical components, etc., can solve the problems of low anti-reflection effect, poor passivation effect, etc., achieve low equipment requirements, reduce reflectivity, and be easy to implement Effect

Inactive Publication Date: 2012-02-01
湖南红太阳新能源科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] At present, in large-scale production, the surface of crystalline silicon solar cells is coated with a layer of silicon nitride anti-reflection film by PECVD method, which has low anti-reflection effect and poor passivation effect.

Method used

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  • Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film
  • Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film

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Embodiment Construction

[0031] A kind of multilayer silicon nitride anti-reflection film for crystalline silicon solar cells, such as figure 1 As shown, a dense silicon nitride film 2 , an intermediate silicon nitride film 3 and a loose silicon nitride film 4 are sequentially deposited on the surface of a silicon wafer 1 . The dense layer silicon nitride film 2 has a refractive index of 2.15-2.35 and a thickness of 5-10 nm; the intermediate layer silicon nitride film 3 has a refractive index of 2.0-2.2 and a thickness of 20-30 nm; the loose layer The silicon nitride film 4 has a refractive index of 1.85-2.05 and a thickness of 40-60 nm.

[0032] In this example, if figure 1 As shown, the dense layer silicon nitride film 2 is the lowermost layer, the loose layer silicon nitride film 4 is the uppermost layer, the dense layer silicon nitride film 2, the middle layer silicon nitride film 3 and the loose layer The silicon nitride thin film 4 is constituted according to the law from bottom to top, and th...

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Abstract

The invention discloses a multilayer silicon nitride antireflection film of a crystalline silicon solar cell and a preparation method of the multilayer silicon nitride antireflection film, belonging to the technical field of manufacturing of semiconductor crystalline silicon and solar cells. The multilayer silicon nitride antireflection film comprises at least three silicon nitride films which are deposited on a silicon substrate, the refraction indexes of all the silicon nitride films are sequentially reduced from bottom to top, and the thicknesses of all the silicon nitride films are sequentially increased from bottom to top. According to the invention, the passivation effect of a coating film is effectively improved, the antireflection effect of the antireflection film is improved, thepassivation effect of the antireflection film is enhanced, and the photoelectric conversion efficiency of the solar cell is increased.

Description

technical field [0001] The invention relates to a multilayer silicon nitride antireflection film for a crystalline silicon solar cell and a preparation method thereof, in particular to a multilayer silicon nitride antireflection film capable of improving the photoelectric conversion efficiency of a solar cell and a preparation method thereof. Background technique [0002] The traditional process of conventional solar cell preparation is: texture cleaning, diffusion, etching, dephosphorous silicon glass, anti-reflection coating, screen printing, and sintering. Among them, the process of coating anti-reflection film is to coat one or more layers of anti-reflection film with matching optical properties on the surface of the battery. The production of anti-reflection film directly affects the reflectivity of solar cells to incident light, and plays an important role in improving the efficiency of solar cells. very important role. The anti-reflection film also needs to have a ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18C23C16/34
CPCY02P70/50
Inventor 郭进刘文峰任哲刘海平罗亮
Owner 湖南红太阳新能源科技有限公司
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