Planar waveguide laser device based on Raman crystal cleavage chip activated by rare earth ions

A flat-plate waveguide and Raman laser technology, applied in laser parts, laser parts, lasers, etc., can solve the problems affecting the output power and efficiency of self-Raman lasers, and achieve the advantages of heat dissipation, compact structure and output. Effect

Inactive Publication Date: 2017-08-18
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to use the smooth crystal plate cleaved from the Raman laser crystal with cleavage characteristics to make a self-Raman slab waveguide laser device, so as to solve the problem that the thermal effect seriously affects the output power of the self-Raman laser during the operation of the self-Raman laser and efficiency issues, to achieve low threshold, high power and high efficiency self-Raman laser output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1 is based on Nd 3+ Activated KY(MoO 4 ) 2 Slab Waveguide Laser Device Based on Raman Crystal Cleavage Wafer

[0020] along 0.01Nd 3+ :KY 0.99 (MoO 4 ) 2 The crystal cleavage direction cleaves a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the KY(MoO 4 ) 2 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 900°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wave laser and self-Raman laser output can be ...

Embodiment 2

[0029] Embodiment 2 is based on Yb 3+ activated BaGd 2 (MoO 4 ) 4 Raman crystal cleavage wafer slab waveguide laser device and manufacturing method thereof

[0030] along 0.01Yb 3+ :BaGd 1.99 (MoO 4 ) 4The cleavage direction cleavages a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the BaGd 2 (MoO 4 ) 4 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 950°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wave laser can ...

Embodiment 3

[0035] Embodiment 3 is based on Nd 3+ activated BaGd 2 (MoO 4 ) 4 Raman crystal cleavage wafer slab waveguide laser device and manufacturing method thereof

[0036] along 0.01Nd 3+ :BaGd 1.99 (MoO 4 ) 4 The cleavage direction cleavages a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the BaGd 1.95 Y 0.05 (MoO 4 ) 4 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 950°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wav...

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PUM

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Abstract

The invention provides a planar waveguide laser and self-Raman laser device based on a self-Raman laser crystal cleavage chip. The planar waveguide laser device is composed of a core layer, an inner cladding layer and an outer cladding layer. The medium of the core layer is a Raman crystal cleavage chip activated by trivalent rare earth ions and provided with a cleavage feature. The medium of the inner cladding layer is a wafer or a glass sheet with a refractive index lower than that of the medium of the core layer. The medium of the outer cladding layer is a wafer with good thermal conductivity. The self-Raman laser crystal cleavage chip is used as the core layer of the planar waveguide laser device so as to achieve low production cost and low light transmission loss. The planar waveguide laser device uses a planar waveguide structure, is suitable for large-area cooling, and can transmit waste heat generated by the operation of a fundamental-wave laser and a self-Raman laser timely to reduce a thermo-light effect. In addition, the waveguide structure can limit beam divergence and improve the optical power density in the gain medium, thereby achieving low-threshold high-power fundamental-wave laser and self-Raman laser output.

Description

technical field [0001] The invention relates to a class of solid slab waveguide laser device, especially a self-Raman slab waveguide laser device. Background technique [0002] Using the stimulated Raman scattering effect of the crystal, the incident fundamental wave laser can be transformed into a series of Raman laser emissions with intervals of phonon frequency, which effectively expands the existing laser band and obtains some applications in military, medical, display, and remote sensing. , ocean detection and many other coherent light sources with important application value, such as new yellow light, orange light and eye-safe 1.5μm laser. The self-Raman laser made by doping trivalent rare earth active ions into the Raman crystal can make the device more stable and compact due to the combination of the fundamental laser generation and the stimulated Raman scattering effect in the same crystal , Easier to adjust and attract much attention. However, the thermal effect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/063H01S3/042H01S3/04H01S3/30
CPCH01S3/063H01S3/0405H01S3/042H01S3/30
Inventor 龚兴红黄艺东陈雨金黄建华林炎富罗遵度
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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