Planar waveguide laser device based on Raman crystal cleavage chip activated by rare earth ions
A flat-plate waveguide and Raman laser technology, applied in laser parts, laser parts, lasers, etc., can solve the problems affecting the output power and efficiency of self-Raman lasers, and achieve the advantages of heat dissipation, compact structure and output. Effect
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Embodiment 1
[0019] Embodiment 1 is based on Nd 3+ Activated KY(MoO 4 ) 2 Slab Waveguide Laser Device Based on Raman Crystal Cleavage Wafer
[0020] along 0.01Nd 3+ :KY 0.99 (MoO 4 ) 2 The crystal cleavage direction cleaves a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the KY(MoO 4 ) 2 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 900°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wave laser and self-Raman laser output can be ...
Embodiment 2
[0029] Embodiment 2 is based on Yb 3+ activated BaGd 2 (MoO 4 ) 4 Raman crystal cleavage wafer slab waveguide laser device and manufacturing method thereof
[0030] along 0.01Yb 3+ :BaGd 1.99 (MoO 4 ) 4The cleavage direction cleavages a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the BaGd 2 (MoO 4 ) 4 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 950°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wave laser can ...
Embodiment 3
[0035] Embodiment 3 is based on Nd 3+ activated BaGd 2 (MoO 4 ) 4 Raman crystal cleavage wafer slab waveguide laser device and manufacturing method thereof
[0036] along 0.01Nd 3+ :BaGd 1.99 (MoO 4 ) 4 The cleavage direction cleavages a wafer with a thickness of 100 μm, a length of 30 mm, and a width of 5 mm as the core layer; along the BaGd 1.95 Y 0.05 (MoO 4 ) 4 Cleave two wafers with a thickness of 50 μm, a length of 30 mm, and a width of 5 mm as the inner cladding; two wafers with a thickness of 3 mm, a length of 30 mm, and a width of 5 mm 2 o 3 One surface of each sapphire wafer is polished to make it smooth and flat to create the outer cladding. Each wafer is subjected to photoresisting in the order of core layer, inner cladding layer, and outer cladding layer, and then molecular thermal diffusion is carried out at a temperature of 950°C to achieve bonding; the two end faces of the waveguide structure obtained after bonding are polished; The fundamental wav...
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