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A graphene electrode MOS based on Ni catalysis 2 Field Effect Transistor Method

A technology of field-effect transistors and graphene electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of inapplicability to large-scale manufacturing and complicated preparation processes, and achieve the effect of solving photoresist residues

Active Publication Date: 2019-12-24
镇江市电子管厂
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Problems solved by technology

[0004] For the current preparation of high-performance MoS 2 The preparation process of field effect transistors is complicated, and it is not suitable for large-scale manufacturing

Method used

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  • A graphene electrode MOS based on Ni catalysis <sub>2</sub> Field Effect Transistor Method
  • A graphene electrode MOS based on Ni catalysis <sub>2</sub> Field Effect Transistor Method
  • A graphene electrode MOS based on Ni catalysis <sub>2</sub> Field Effect Transistor Method

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Embodiment 1

[0025] The specific implementation steps are as follows:

[0026] 1. On SiO 2 0.5~1µm polydimethylglutarimide (PMGI) and 20nm phenylpropanolamine hydrochloride (PPA) were deposited on the / Si substrate respectively, and a 5×10µm width was directly written by thermal scanning probe nanofabrication technology. Graphics, vapor deposition of Ni metal with a thickness of 500~800nm ​​to form a patterned Ni catalytic nano-layer. Such as figure 1 shown.

[0027] 2. Prepare SiO with Ni nano-layer 2 / Si substrate was soaked in acetic acid for 5~10min to remove the oxide on the surface of the Ni catalyst layer. The substrate was placed in a quartz tube furnace and evacuated to 10-6Torr, and H 2 / Ar (5% by volume) atmosphere at 1200~1500°C for 2 hours to remove impurities on the surface of the Ni nanolayer. Adjust the temperature to 1000~1200℃ and feed CH 4 , Ar, H 2 The mixed gas lasts for 30~60min. Stop CH 4 , cooled to get figure 2 The patterned graphene electrode is shown....

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Abstract

The invention provides a method for preparing a graphene electrode MoS2 field effect transistor based on Ni catalysis, and the method comprises the steps: 1, preparing a patterned Ni catalysis nanolayer; 2, preparing a patterned graphene electrode; 3, growing a single MoS2 layer; 4, carrying out the etching of an MoS2 trench: etching a needed MoS2 trench on a prepared MoS2 / graphene / Ni nanolayer sample. The method solves a problem of photoresist residual when the conventional photoetching technology is used for the patterning of graphene. Meanwhile, the invention also proposes a simple and high-efficiency method for preparing the MoS2 field effect transistor through a graphene electrode.

Description

technical field [0001] The invention relates to a large-scale preparation of high-performance MoS in the manufacture of micro-nano electronics 2 field effect transistor method. Background technique [0002] In the past ten years, the key to the development of digital logic circuits is to manufacture smaller metal-oxide-semiconductor transistors. When the gate length of traditional transistors is less than 10nm, the stability of transistors manufactured by traditional silicon processes will deteriorate (short channel quantum effect), and 10nm will become the limit of silicon-based transistors. Since the discovery of graphene by Geim et al. in 2004, two-dimensional materials with excellent performance have attracted the attention of researchers from all over the world. Single-layer MoS 2 With a bandgap of 1.8eV and a switch ratio close to 108, it has the potential to be used as a high-performance field effect transistor channel material. Due to MoS 2 Electron affinity mis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L21/443
CPCH01L21/443H01L29/66969
Inventor 王江祥王权董金耀韦国成
Owner 镇江市电子管厂
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