Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoelectric device and preparation method thereof

A device and photoelectric effect technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as photoelectric effect and electroluminescent devices that have not yet appeared, and achieve the effect of interaction

Inactive Publication Date: 2017-08-25
苏州市皎朝纳米科技有限公司
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, at present, with the development of semiconductors, there are already many devices that can produce photoelectric effect, and there are also many devices that can produce electroluminescence. Devices that simultaneously generate photoelectric effect and electroluminescence

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] The first step, preparation of heterojunction nanorods

[0035] 1. Dissolve 0.128 g of CdO powder and 0.668 g of n-octadecanyl phosphate in 2 g of tri-n-octylphosphine oxide (TOPO);

[0036] 2. Degas at 150°C for 30 minutes, then heat to 370°C under nitrogen atmosphere to generate Cd-ODPA complex;

[0037] 3. Dissolve 16 mg of S in 1.5 ml of trioctyl (TOP), mix well, and quickly inject it into the product of step 2 at 370°C;

[0038] 4. Stir at 330°C for 20 minutes;

[0039] 5. Cool the reaction mixture to 250°C;

[0040] 6. Dissolve 15 mg of tellurium in 1 mL of TOP; then slowly add to the mixture from step 5;

[0041] 7. After 10 minutes, the reaction mixture was cooled to room temperature, and the obtained cadmium sulfide / cadmium telluride nanorods were precipitated and then dissolved in 4 ml of chloroform;

[0042] 8. Mix 6 ml of octadecene, 1.13 g of oleic acid and 0.184 g of zinc acetate, degas at 150°C for 30 minutes, then stir at 250°C for 1 hour under N2 at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Grain diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a device capable of producing a photoelectric effect and electroluminescence simultaneously and a preparation method thereof. The photoelectric device is acquired through packaging a cadmium sulfide / cadmium telluride heterogeneous junction nano-rod, and specifically comprises an anisotropic conductive film, an Al electrode, ZnO, a heterogeneous junction nano-rod, 2, 3, 5, 6-tetrafluoro-7, 7', 8, 8'-tetracyanoquinodimethane, TCNQF4 and the like. The invention further discloses a preparation method of the photoelectric device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a device capable of producing photoelectric effect and electroluminescence simultaneously and a preparation method thereof. Background technique [0002] Since nanomaterials, especially quantum dots and nanoheterojunctions, have different energy band structures from bulk materials, they have great application potential in the field of optoelectronics. For example, Chinese invention patent CN103943733A discloses a preparation method of an LED ultra-parallel light source based on vertical nanowires. The light source uses a Si-CdS heterogeneous pn junction of vertical silicon nanowires, and the microlens uses a concave mirror. The preparation method specifically includes: first preparing a dot mask to determine the size of the silicon nanowire; then using ICP-RIE dry etching technology to prepare the silicon nanowire; and thermally oxidizing the silicon nanowire to remove part of the o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0296H01L31/0352H01L31/109H01L31/18H01L33/00H01L33/24H01L33/28B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/0296H01L31/035227H01L31/109H01L31/1836H01L33/0087H01L33/24H01L33/28Y02P70/50
Inventor 不公告发明人
Owner 苏州市皎朝纳米科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com