Gallium nitride position sensitive radiation detector and preparation method thereof

Abstract

The invention provides a gallium nitride position sensitive radiation detector and a preparation method thereof, and belongs to the technical field of semiconductor device preparation. The detector has a semi-insulating gallium nitride single crystal substrate on which an n-type gallium nitride layer, an InGaN insertion layer, a high-resistance gallium nitride detection sensitive region, patterned p-type gallium nitride layers and an insulating medium protection layer are sequentially grown. The InGaN insertion layer is has a smaller width than the n-type gallium nitride layer, and the InGaN intercalation layer and the high-resistance gallium nitride detection sensitive region have the same width. The plurality of patterned p-type gallium nitride layers are spaced on the high-resistance gallium nitride detection sensitive region, an upper ohmic contact electrode is prepared on the patterned p-type gallium nitride layers, and a lower ohmic contact electrode is prepared on an uncovered region on the n-type gallium nitride layer. Outside the patterned p-type gallium nitride layers is the insulating medium protection layer. The invention solves the problem of preparing a high-performance gallium nitride position sensitive radiation detector and realizes the development of the new type of gallium nitride position sensitive radiation detector.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and relates to a radiation detector based on gallium nitride material and a preparation method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by gallium oxide are widely used in high-frequency, high-power, It has important applications in electronic devices such as radiation resistance. GaN has a bandgap width of 3.39eV, can exist stably at room temperature and higher, and has excellent chemical stability. In addition, the radiation resistance of GaN is 10,000 times that of Si, and has better radiation resistance. The density of GaN is 6.2g / cm 3 , for the same detection energy range, the GaN detector can be made thinner to improve the sensitivity of the detector. The theoretical intrinsic energy resolution (@60keV) of GaN material can also reach 0.643keV. These excellent properties of GaN make it an ideal ...

AI Technical Summary

Problems solved by technology

However, there are no related reports on the preparation of position-sensitive radiation detectors based on gallium nitride materials.

The main reasons are: 1. The high-quality gallium nitride single crystal substrate has only been successfully developed recently; 2. The particles or rays emitted by the radiation source have extremely high penetrating ability, and the energy deposition rate in the semiconductor is low, resulting in The signal is extremely small, and the structure and parameters of traditional semiconductor detectors can no longer be used as a reference. 3. Gallium nitride is a new type of wide bandgap semiconductor. Innovative device structure design

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