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Doping engineered hole transport layer for perovskite-based device

一种卤化物钙钛矿、掺杂物的技术，应用在电固体器件、半导体器件、半导体/固态器件制造等方向，能够解决不足够健壮、难以获得器件等问题

Active Publication Date: 2017-08-29
OKINAWA INST OF SCI & TECH SCHOOL
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, to date, stable perovskite-based devices have been difficult to obtain using existing fabrication techniques
Furthermore, these existing techniques are not robust enough to fabricate perovskite-based devices with doped engineered layers, multi-junction or tandem cell structures, heterostructure configurations, or other advanced optoelectronic structures

Method used

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  • Doping engineered hole transport layer for perovskite-based device
  • Doping engineered hole transport layer for perovskite-based device
  • Doping engineered hole transport layer for perovskite-based device

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Embodiment Construction

[0041] Source materials for fabricating organometallic halide perovskite films include halide materials such as PbCl 2 , PbBr 2 , PbI 2 , SnCl 2 , SnBr 2 , SnI 2 etc.) and methylammonium (MA=CH 3 NH 3 + ) compounds (such as, CH 3 NH 3 Cl, CH 3 NH 3 Br, CH 3 NH 3 I, etc.). Instead of or in combination with MA compounds, formamidine (FA=HC(NH 2 ) 2 + ) compounds. Organohalide perovskites have usually denoted as ABX 3 The orthorhombic crystal structure of , in which the organic element MA or FA occupies each site (site) A; the metal element Pb 2+ or Sn 2+ Occupies each site B; and the halogen element Cl - , I - or Br - Occupy each site X. In this document, AX denotes an organic halide compound having the organic element MA or FA for the A cation combined with a halogen element Cl, I or Br for the X anion; BX 2 denotes a metal halide compound having a metal element Pb or Sn for a B cation combined with a halogen element Cl, I or Br for an X anion. Here, th...

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Abstract

An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

Description

technical field [0001] The present invention relates to doped engineered hole transport layers for perovskite based devices for optoelectronic applications. Background technique [0002] A solar cell (also known as a photovoltaic cell) is an electrical device that converts solar energy into electricity by using semiconductors that exhibit the photovoltaic effect. Solar PV is now the third most important renewable energy source after hydropower and wind power in terms of installed capacity globally. The construction of these solar cells is based on the concept of a p-n junction, where photons from solar radiation are converted into electron-hole pairs. Examples of semiconductors used in commercial solar cells include monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium gallium diselenide. Solar cell energy conversion efficiencies for commercial batteries are currently reported to be around 14-22%. [0003] High conversio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/48
CPCY02E10/549Y02P70/50H10K71/164H10K71/30H10K85/331H10K30/151H10K30/40H10K85/50H10K30/50H10K30/211
Inventor 戚亚冰郑敏喆S·鲁伊斯·拉格
Owner OKINAWA INST OF SCI & TECH SCHOOL
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