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Method for detecting potential of hydrogen of photoresist

A technology of pH and light detection, which is applied in chemical method analysis, measuring devices, chemical analysis by titration, etc., to achieve the effects of increasing profits, improving product yield, improving accuracy and repeatability

Inactive Publication Date: 2017-09-01
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for detecting the pH of photoresist against the deficiencies of the prior art. pH, improve product yield, can be vigorously promoted in the TFT industry

Method used

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  • Method for detecting potential of hydrogen of photoresist
  • Method for detecting potential of hydrogen of photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] (1) Put a piece of 10cm×10cm plain glass in an oven at 230°C for 1 hour, take it out, dry and cool it, and weigh 11.71660g;

[0059] (2) Add a certain amount of liquid photoresist dropwise on the above-mentioned plain glass, put it into a spin coater, and coat the liquid photoresist on the glass substrate to obtain photoresist glass; then place the photoresist glass at 230°C Bake in an oven for 1 hour, take it out, dry and cool, and weigh 11.80261g;

[0060] (3) Dissolve the photoresist on the glass substrate with an excess of 1mol / L sodium hydroxide solution to obtain a photoresist mixture, record the volume of 20.00mL of lye consumed; rinse the substrate with water, and add the obtained rinse solution to the In the photoresist mixture, ensure that the photoresist is completely dissolved;

[0061] (4) Titrate the photoresist mixture to neutrality with hydrochloric acid with a concentration of 1 mol / L, and record the volume of acid solution consumed as 18.66 mL;

[00...

Embodiment 2

[0063] Embodiment 2: Precision experiment

[0064] Three different liquid photoresists were selected, and the mass fraction of hydrogen ions in the photoresist was measured according to the detection method described in Example 1. Each sample was measured 3 times in parallel, and the relative standard deviation was calculated. The experimental results are shown in Table 1.

[0065] Table 1: the precision experiment result of method of the present invention

[0066] sample measured value(%) average value(%) Relative standard deviation RSD Liquid photoresist sample 1 1.54 / 1.58 / 1.56 1.56 1.28 Liquid photoresist sample 2 1.68 / 1.66 / 1.66 1.67 0.69 Liquid photoresist sample 3 1.87 / 1.81 / 1.84 1.84 1.63

[0067] It can be seen from the above experiments that the detection of the present invention has high precision and good repeatability, and can be vigorously promoted in the TFT industry.

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Abstract

The invention relates to a method for detecting the potential of hydrogen of a photoresist. The method comprises the following steps that S1, a base plate with the mass being m1 is coated with a liquid state photoresist, and after the photoresist is dried, the total mass m2 of the base plate and the photoresist is weighed; S2, the photoresist on the base plate is dissolved by means of excess alkali liquor, photoresist mixed liquor is obtained, and the volume V1 of consumed alkali liquor is recorded; S3, acid liquor is used for changing the photoresist mixed liquor to be neutral in a titration mode, and the volume V2 of consumed acid liquor is recorded; and S4, the mass fraction w of hydrogen ions in the photoresist is calculated. By adoption of the method, the problems that measurement of the potential of hydrogen of the photoresist is difficult and low in accuracy are solved, the potential of hydrogen of the photoresist after coating can be strictly controlled, and the yield of products is increased; and meanwhile, the detection repeatability is improved by means of the method, and the method can be vigorously popularized in the thin film transistor (TFT) industry.

Description

technical field [0001] The invention belongs to the technical field of detection of photoresist pH, and in particular relates to a method for detecting photoresist pH. Background technique [0002] Thin-film transistor (TFT) technology is a large-scale semiconductor integrated circuit technology using new materials and new processes. It constructs extremely fine various film, and process the film by etching, peeling, etc., to manufacture integrated circuits. It first forms an oxide insulating film or aluminum alloy and other conductive films on the substrate by sputtering or chemical deposition, and then uniformly coats photoresist on the above film layer, and after exposing / developing the photoresist to form a given pattern, the photoresist is used as the The mask, through wet etching or dry etching, obtains the required pattern on the film layer. [0003] Photoresist mainly includes four components: pigment, sensitizer, dispersant and solvent. In principle, the pH of th...

Claims

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Application Information

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IPC IPC(8): G01N31/16
CPCG01N31/162
Inventor 夏振宇钟兴进张小新张维维林虹云
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD