Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon-based SERS chip, preparation method of silicon-based SERS chip and TNT detection method

A chip, silicon-based technology, applied in the detection of TNT, silicon-based SERS chip and its preparation field

Inactive Publication Date: 2017-09-08
SUZHOU UNIV
View PDF3 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no on-site detection platform for the combination of portable SERS sensor and hand-held Raman instrument for detecting TNT in the actual system in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-based SERS chip, preparation method of silicon-based SERS chip and TNT detection method
  • Silicon-based SERS chip, preparation method of silicon-based SERS chip and TNT detection method
  • Silicon-based SERS chip, preparation method of silicon-based SERS chip and TNT detection method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] The present invention will solve a kind of preparation method of silicon-based SERS chip, comprise the following steps:

[0033] Cleaning the silicon wafer for the first time, removing impurities on the surface, and then performing a second cleaning; performing a hydrosilylation reaction on the surface of the silicon wafer after the second cleaning, to obtain a silicon wafer with Si-H bonds on the surface; Silicon wafers with Si-H bonds on the surface in Ag + The reduction reaction was carried out in the environment to obtain the silicon wafer AgNPs@Si modified by silver nano ions; the modified compound was reacted with AgNPs@Si, and the third cleaning was performed after the reaction to obtain the silicon-based chip.

[0034] According to the present invention, in the above steps, firstly, the silicon wafer is cleaned for the first time, and the first cleaning is specifically carried out with deionized water and acetone for ultrasonic cleaning for 10 to 20 minutes, and...

Embodiment 1

[0047] Take 0.5×0.5cm 2 Put 3 to 6 single silicon wafers of different sizes into a clean beaker and use deionized water and acetone to sonicate for 15 minutes respectively in an ultrasonic instrument to obtain silicon wafers with a clean surface for use. Then soak the silicon wafer in a mixed solution of 40 mL of sulfuric acid and hydrogen peroxide for 30 minutes to remove insoluble impurities therein, and finally clean the silicon wafer with deionized water for later use.

[0048] Soak the cleaned silicon chip in 10wt% hydrofluoric acid for 20 minutes, let it carry out the hydrosilylation reaction, and make the surface of the silicon chip form a Si-H bond, then place the processed silicon chip in a petri dish, with the shiny side facing Then put it into a mixed solution of 1M silver nitrate and 40wt% hydrogen fluoride (volume ratio = 1:50) for reduction reaction, the silver ions will be reduced by Si-H bonds, and a uniform layer of raw material will be formed on the surface o...

Embodiment 2

[0052] Take 0.5×0.5cm 2 Put 3 to 6 single silicon wafers of different sizes into a clean beaker and use deionized water and acetone to sonicate for 15 minutes respectively in an ultrasonic instrument to obtain silicon wafers with a clean surface for use. Then soak the silicon wafer in a mixed solution of 40 mL of sulfuric acid and hydrogen peroxide for 30 minutes to remove insoluble impurities therein, and finally clean the silicon wafer with deionized water for later use.

[0053] Soak the cleaned silicon chip in 20wt% hydrofluoric acid for 20 minutes, let it carry out the hydrosilylation reaction, and make the surface of the silicon chip form a Si-H bond, then place the processed silicon chip in a petri dish, with the shiny side facing Then put it into a mixed solution of 1M silver nitrate and 40wt% hydrogen fluoride (volume ratio = 1:50) for reduction reaction, the silver ions will be reduced by Si-H bonds, and a uniform layer of raw material will be formed on the surface o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of public safety detection and discloses a silicon-based SERS (Surface-enhanced Raman spectroscopy) chip for TNT detection and a preparation method thereof, as well as a portable platform for on-site TNT detection, built together with a 785 nm portable Raman instrument. The silicon-based chip is characterized in that a silicon wafer is modified with silver nanoparticles in situ by a hydrofluoric acid assisted silver nitrate reduction method, and then the surface of a chip is modified with a compound (for example, p-aminothiophenol) interacting with TNT, and the silicon-based chip is used for TNT capture and SERS signal enhancement. The prepared silicon-based SERS chip has excellent sensitivity, the detection limit lower than -1 pM (-45.4 fg / cm<2>), good SERS signal reproducibility and relative standard deviation (RSD) smaller than 15%. More importantly, the built portable platform for in-situ TNT detection is suitable for qualitative analysis of trace TNT in a practical environmental sample.

Description

technical field [0001] The invention belongs to the field of public safety detection, and mainly relates to a silicon-based SERS chip, a preparation method thereof and a TNT detection method. Background technique [0002] 2,4,6-Trinitrotoluene (TNT) is one of the most commonly used hazardous explosives, which can not only cause safety threats, but also cause environmental pollution problems. If humans are exposed to TNT for a long time, TNT will be absorbed through the skin, which may cause anemia and abnormal liver function (see: J. Am. Chem. Soc. 2008, 130, 9726-9733). More importantly, the U.S. Environmental Protection Agency pointed out that if a child's daily drinking water contains more than 88nM of TNT residues, it may increase the risk of cancer by 1 in 10,000 (see: 2012Edition of the drinking water standards and health advisories, United States Environmental Protection Agency, Washington, DC, 2012). What is more noteworthy is that transportation hubs are increasin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
CPCG01N21/65
Inventor 何耀陈娜王后禹
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com