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A kind of laser-induced cadmium tungstate crystal growth method

A crystal growth, laser-induced technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of poor uniformity of cadmium tungstate crystal growth, achieve good optical quality, prevent the formation of impurities, and ensure uniformity Effect

Active Publication Date: 2019-05-10
SINOMA SYNTHETIC CRYSTALS (SHANDONG) CO LTD
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Problems solved by technology

[0005] In order to solve the problem of poor uniformity of cadmium tungstate crystal growth in the prior art, the present invention provides a laser-induced cadmium tungstate crystal growth method. On the basis of using the traditional crucible drop method to grow cadmium tungstate crystals, the laser is introduced as an induction method. source to achieve uniform growth of cadmium tungstate crystals

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  • A kind of laser-induced cadmium tungstate crystal growth method
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  • A kind of laser-induced cadmium tungstate crystal growth method

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Embodiment Construction

[0030] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0031] Aiming at the existing problems, the embodiment of the present invention provides a laser-induced cadmium tungstate crystal growth method, in which CdWO is grown by the crucible drop method 4 crystal while irradiating the solid-liquid interface between the growing crystal and the melt with laser light. CdWO grown using the above method 4 The crystals are of good optical quality.

[0032] As an example, the specific flow of the laser-induced cadmium tungstate crystal growth method of the present invention is as follows figure 1 shown, using figure 2 and image 3 The shown heating furnace body 1 and laser system 2 are implemented:

[0033] Step S1. Crucible filling: CdWO 4 The seed crystal is placed at the lower end of the crucible 18, and th...

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Abstract

An embodiment of the invention provides a laser induced cadmium tungstate crystal growing method. The laser induced cadmium tungstate crystal growing method comprises the following steps: placing CdWO4 seed crystal at the lower end of a crucible, and filling the crucible with a CdWO4 polycrystal material; placing the crucible in a ceramic tube, filling a gap between the crucible and the ceramic tube with Al2O3 powder, and placing the ceramic tube on a lifting table in a furnace body of a heating furnace; heating the furnace body to a set temperature, and carrying out welding of the seed crystal before growth of crystal; enabling the lifting table to fall, and meanwhile, radiating a solid-liquid interface by laser; and after growth of the crystal is finished, reducing the temperature of the furnace to room temperature, and stripping the crystal from the crucible to obtain CdWO4 single crystal. The CdWO4 crystal grows by a Bridgman-Stockbarger method, during growth of the crystal, the laser irradiates the solid-liquid interface between the growing crystal and melt to carry out induction, stable growth of the CdWO4 crystal is realized, the uniform and transparent CdWO4 single crystal can be obtained, and the single crystal has good optical quality.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a cadmium tungstate (CdWO) induced by laser irradiation. 4 ) method of crystal growth. Background technique [0002] Scintillation crystal is a photoelectric functional material, which refers to a material that can emit pulsed light under the action of high-energy particles or rays (such as X-rays, γ-rays, etc.). As the core part of scintillation detectors, scintillation crystals are usually used to detect the quantity, energy and direction of high-energy radiation particles such as high-energy charged particles, X-rays, gamma-rays and neutrons. [0003] As a very important inorganic scintillation crystal, cadmium tungstate has excellent scintillation properties, especially its large absorption coefficient for X-rays (at 150keV, the line absorption coefficient can reach 7.68cm -1 ), short radiation length (1.0cm), and strong anti-damage performance, so it has become the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B13/00
CPCC30B13/00C30B29/32
Inventor 高雪松
Owner SINOMA SYNTHETIC CRYSTALS (SHANDONG) CO LTD
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