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Fabrication method of low-PIM and high-performance microwave high-frequency composite ceramic substrate

A composite ceramic, high-performance technology, applied in high-frequency matching devices, circuit substrate materials, printed circuit manufacturing, etc., can solve problems that plague radio frequency and microwave communication systems, and achieve low intermodulation interference, excellent mechanical strength, and excellent signal simulation Effect

Inactive Publication Date: 2017-09-22
TAIZHOU BOTAI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The passive intermodulation problem caused by the weak nonlinear third-order or high-order PIM mixing products of passive devices falling into the normal circuit system is one of the harmful factors that plague the radio frequency microwave communication system

Method used

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  • Fabrication method of low-PIM and high-performance microwave high-frequency composite ceramic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0020] A1. To make microwave high-frequency ceramic insulating dielectric material layer 1, mix polytetrafluoroethylene powder and low-temperature co-fired ceramic powder at a ratio of 1:1, and form a dielectric material through a ball mill for 25 hours, and then place the dielectric material in a mold for 300 hours. ~320°C high-temperature pressing to form microwave high-frequency ceramic insulating dielectric material layer 1;

[0021] A2. To make low-PIM ceramic bonding sheet 2, select a low-temperature ceramic sheet with a thickness of 8.4 μm and put it into the polytetrafluoroethylene dispersion liquid for pre-impregnation with a dipping machine, and then sinter at a high temperature of 300-320°C to obtain a low-PIM ceramic bonding sheet. Knot 2;

[0022] A3. To make a low-PIM high-performance microwave high-frequency composite ceramic substrate, select a matt copper foil 3 with a surface roughness of 0.09 μm and a thickness of 35 μm, and place the matt copper foil 3 abov...

Embodiment example 2

[0024] B1. To make microwave high-frequency ceramic insulating dielectric material layer 1, mix polytetrafluoroethylene powder and low-temperature co-fired ceramic powder at a ratio of 1:3, and form a dielectric material through a ball mill for 35 hours, and then place the dielectric material in a mold for 300 hours. ~320°C high-temperature pressing to form microwave high-frequency ceramic insulating dielectric material layer 1;

[0025] B2. To make low-PIM ceramic bonding sheet 2, select a low-temperature ceramic sheet with a thickness of 8 μm and put it into the polytetrafluoroethylene dispersion liquid for pre-impregnation with a dipping machine, and then sinter at a high temperature of 300-320°C to obtain a low-PIM ceramic bonding slice 2;

[0026] B3. To make a low-PIM high-performance microwave high-frequency composite ceramic substrate, select a matt copper foil 3 with a surface roughness of 0.08 μm and a thickness of 280 μm, and place the matt copper foil 3 above and b...

Embodiment example 3

[0028] C1. To make microwave high-frequency ceramic insulating dielectric material layer 1, mix polytetrafluoroethylene powder and low-temperature co-fired ceramic powder at a ratio of 3:7, and form a dielectric material through a ball mill for 30 hours, and then place the dielectric material in a mold for 300 hours. ~320°C high-temperature pressing to form microwave high-frequency ceramic insulating dielectric material layer 1;

[0029] C2. To make low-PIM ceramic bonding sheet 2, select a low-temperature ceramic sheet with a thickness of 7.8 μm and put it into the polytetrafluoroethylene dispersion liquid for pre-impregnation with a dipping machine, and then sinter at a high temperature of 300-320°C to obtain a low-PIM ceramic bonding sheet. Knot 2;

[0030] C3. To make a low-PIM high-performance microwave high-frequency composite ceramic substrate, select a matt copper foil 3 with a surface roughness of 0.085 μm and a thickness of 60 μm, and place the matt copper foil 3 abo...

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Abstract

The invention discloses a fabrication method of a low-PIM and high-performance microwave high-frequency composite ceramic substrate. The fabrication method comprises the following steps of fabricating a microwave high-frequency ceramic insulation dielectric material layer; fabricating a low-PIM ceramic bonding sheet; and selecting a matte copper foil layer, the insulation dielectric material layer and the low-PIM ceramic bonding sheet, respectively arranging matte copper foils on and under the insulation dielectric material layer, spacing and pasting the low-PIM ceramic bonding sheet at a middle part, and finally performing processing and formation in a high-temperature environment and under pressure. The ceramic substrate obtained by the method has the characteristics of low PIM value, small intermodulation interference, excellent signal simulation, excellent mechanical strength, stress relaxation resistance, creep resistance, thermal resistance, water prevention, steam resistance and size stability.

Description

technical field [0001] The invention relates to the field of ceramic circuit substrates, in particular to a preparation method of a low-PIM high-performance microwave high-frequency composite ceramic substrate. Background technique [0002] The passive intermodulation problem caused by the weak nonlinear third-order or high-order PIM mixing products of passive devices falling into the normal circuit system is one of the harmful factors that plague the radio frequency microwave communication system. In the early days, passive intermodulation mainly caused interference to high-power microwave devices such as circulators, waveguides, coaxial connectors, duplexers, attenuators, and antennas. As printed circuit boards are more and more widely used in the field of microwave circuits to develop flat-panel integrated RF front-ends, the increase in signal power makes the PIM problem of the PCB substrate itself a hindrance to the development of high-performance RF circuit antennas. A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/02H05K1/03H05K1/09H05K1/02
CPCH05K1/0216H05K1/024H05K1/0353H05K1/09H05K3/022H05K2201/015H05K2201/0388
Inventor 刘兆贺永宁毛建国李建凤倪文波
Owner TAIZHOU BOTAI ELECTRONICS
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