Smelting method for high-purity 5N tellurium

Abstract

The invention discloses a 5N high-purity tellurium smelting method, which comprises the following steps: (1) producing 4N tellurium ingots conforming to the YS/T222-2010 standard by using a low current density electrodeposition method; (2) subjecting the 4N tellurium ingots to low temperature Vacuum real distillation to produce distilled tellurium; (3) Break the distilled tellurium into small particles, then put it into a pure quartz crucible and heat it in a hydrogen flow, and cast an ingot to obtain a 5N high-purity tellurium ingot.

Description

technical field [0001] The invention relates to a method for purifying tellurium, in particular to a method for smelting 5N high-purity tellurium. Background technique [0002] Purification of tellurium has always been a difficult problem for those skilled in the art. [0003] At present, the high-purity tellurium smelting process generally adopts vacuum true distillation of 3N or 4N tellurium. There are serious defects in these methods: first, elements close to the boiling point of tellurium in a vacuum state are seriously residual, such as selenium, and lead residues are also very serious when the temperature is high, which affects the purity of tellurium and makes it difficult for tellurium to reach 5N; second, the vacuum is relatively high. Yes, there is always a dark gray oxide film on the surface of distilled tellurium, which also affects the purity of tellurium. At present, the high-purity tellurium produced by the traditional high-purity tellurium smelting process ...

AI Technical Summary

Problems solved by technology

There are serious defects in these methods: first, elements close to the boiling point of tellurium in a vacuum state are seriously residual, such as selenium, and lead residues are also very serious when the temperature is high, which affects the purity of tellurium and makes it difficult for tellurium to reach 5N; second, the vacuum is relatively high. Yes, there is always a dark gray