inp/gap/zns core-shell quantum dots and preparation method thereof

A core-shell quantum dot and quantum dot technology, which is applied in the field of InP/GaP/ZnS core-shell quantum dots and their preparation, can solve the problem of low quantum yield of quantum dots with related core-shell structures, the difficulty of effective growth of ZnS shell, and the difficulty of crystallizing. The problem of poor lattice matching degree, etc., can improve the growth of ZnS shell, be easy to control, and reduce the lattice difference.

Active Publication Date: 2021-01-29
深圳天吉新创科技有限公司
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Problems solved by technology

However, in the synthesis process from InP to InP / ZnS and other core-shell structures, due to the poor lattice matching between the two, it is difficult for the ZnS shell to grow effectively on the surface of InP, making the quantum yield of related core-shell structure quantum dots relatively low. Low, usually the thickness of the quantum dot shell with high synthetic quality does not exceed 2nm and the stability is poor, which limits its related applications

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  • inp/gap/zns core-shell quantum dots and preparation method thereof
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  • inp/gap/zns core-shell quantum dots and preparation method thereof

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[0025] One aspect of the present invention provides a method for preparing InP / GaP / ZnS core-shell quantum dots, comprising the following steps:

[0026] S1, dissolving the indium precursor, the gallium precursor and the zinc precursor in an organic solvent to obtain an indium gallium zinc mixed precursor solution;

[0027] S2, adding the phosphorus precursor into the mixed precursor solution of indium gallium zinc, and obtaining InP / GaP:Zn quantum dot nucleus solution after reaction;

[0028] S3. Add shell material to the InP / GaP:Zn quantum dot core solution several times at intervals for reaction, the shell material is a mixed solution of zinc salt solution and mercaptan, to obtain the InP / GaP / ZnS core Shell quantum dots.

[0029] According to a specific embodiment of the present invention, the indium precursor includes at least one of indium acetate, indium iodide, indium chloride, indium oleate, and indium stearate.

[0030] According to a specific embodiment of the prese...

Embodiment 1

[0054] In this embodiment, the indium precursor is indium acetate, the gallium precursor is gallium chloride, both the zinc precursor and the zinc salt are zinc oleate, and the phosphorus precursor is tris(trimethylsilyl ) phosphorus, and the mercaptan is an octaalkyl bidentate mercaptan. The organic solvent is a mixture of liquid paraffin and oleic acid.

[0055] (1) Prepare quantum dot core InP / GaP solution.

[0056] Take 0.3mmol indium acetate, 0.1mmol gallium chloride and 0.8mmol zinc oleate and mix them into a 100mL three-necked flask, then add 10mL liquid paraffin and 1mL oleic acid. Under the protection of nitrogen, evacuate the air at 100°C for 40 minutes, then lower it to room temperature and add 0.5mmol tris(trimethylsilyl)phosphorus, then react at room temperature for 15 minutes, then rapidly heat to 280°C, and react for 20 minutes to obtain InP / GaP quantum dots nuclear solution.

[0057] (2) Synthesizing the quantum dot shell ZnS covering the quantum dot core In...

Embodiment 2

[0081] The preparation method of the InP / GaP / ZnS core-shell quantum dots of Example 2: refer to the preparation method of Example 1, the difference is that the molar amount of Ga added when synthesizing the quantum dot core InP / GaP is 0.2 mmol, and other parameters are the same. The particle diameter of the InP / GaP / ZnS core-shell quantum dot is about 8.3nm, the thickness of the shell layer is 3.1nm, and the quantum yield is 70%.

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Abstract

The invention provides a method for preparing InP / GaP / ZnS core-shell quantum dots, comprising the following steps: dissolving an indium precursor, a gallium precursor and a zinc precursor in an organic solvent to obtain an indium-gallium-zinc mixed precursor solution; The precursor is added to the mixed precursor solution of indium gallium zinc, and the InP / GaP:Zn quantum dot core solution is obtained after the reaction; the shell material is added to the InP / GaP:Zn quantum dot core solution at intervals for multiple times to react, The shell layer material is a mixed solution of zinc salt solution and mercaptan, and the InP / GaP / ZnS core-shell quantum dots are obtained. The preparation method of the invention has a simple synthesis process, the quantum yield reaches 60%-90%, and the fluorescence wavelength range covers 510-650nm. The shell thickness of the InP / GaP / ZnS core-shell quantum dot prepared by the invention is relatively thick and the stability is good.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP / GaP / ZnS core-shell quantum dot and a preparation method thereof. Background technique [0002] Semiconductor fluorescent quantum dots (QDs) have excellent optical properties such as high fluorescence quantum yield, strong photochemical stability, good monochromaticity, and continuously adjustable fluorescence emission peak position with particle size. In recent years, quantum dot-based light-emitting devices, biological detection, etc. have aroused extensive research interest. At present, quantum dots used in high-performance devices and good biological detection are mostly based on II-VI quantum dots. Due to the inherent toxicity of quantum dots containing heavy metals such as Cd and Hg, their practical applications are strictly limited. Among many quantum dots, InP-based quantum dots not only have narrow emission peaks similar to II-VI quantum dots, high luminous st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/70B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/70
Inventor 白杰恒蔚宏
Owner 深圳天吉新创科技有限公司
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