Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of resistive memory cell

A technology of memory cells and electrodes, which is applied in the fields of electrical components, semiconductor devices, electric solid-state devices, etc., can solve the problems of RRAM type memory density limited photoresist adhesion and other problems

Active Publication Date: 2021-09-21
STMICROELECTRONICS (ROUSSET) SAS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Thus, the density of RRAM type memory is limited by the problem of photoresist adhesion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of resistive memory cell
  • Manufacturing method of resistive memory cell
  • Manufacturing method of resistive memory cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] BEOL interconnects are typically formed on electronic circuits fabricated in and on semiconductor substrates and include multiple contiguous planes of metallization. The resistive memory cell is, for example, formed between two metallization planes Mi and Mi+1.

[0040] The metallization plane Mi is shown in great detail and comprises in particular the metal traces forming the word lines WL extending in the first direction X .

[0041] In an initial step, in a manner conventional and known in practice, a first conductive contact CWL connected to a word line has been formed in a dielectric layer OX, which is deposited on the metallization plane Mi.

[0042] Preferably and conventionally, the surface S comprising the dielectric OX contacting the CWL is planarized by means such as wet chemical-mechanical planarization.

[0043] In the first step of the preferred process for forming the RRAM storage plane, the first conductive layer CC1 is finally deposited on the surface ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure relates to a method of manufacturing a resistive memory cell. An oxide-based direct access resistive memory type non-volatile memory, which includes a storage plane in an interconnection of an integrated circuit, and the storage plane includes a storage plane extending in vertical first and second directions (X, Y). Capacitive memory cells (CEL) and each memory cell (CEL) includes a first electrode (BE), a dielectric region (MOX) and a second electrode (TE). The storage plane (PM) includes: a square or rectangular conductive pad forming the first electrode; the stacked structure of the dielectric layer (MOX) and the second conductive layer (CC2), the stacked structure in the first A direction (X) covers the pads, and a conductive strip (BDY) extending over and between the pads is formed in a second direction (Y); the second electrode (TE) is formed by facing the pads. The region of the second strip (BDY) of the pad is formed.

Description

technical field [0001] Embodiments and fabrication methods of the present invention relate to a resistive memory type non-volatile memory. Background technique [0002] Resistive RAM (RRAM) such as oxide-based direct access memory (OxRAM), electrolytic memory (CBRAM) or ferromagnetic memory (FRAM) has many advantages and characteristics, especially very short read and write times, low Operating voltage, low power consumption, ease of integration, virtually infinite endurance, and potentially very high density. [0003] The RRAM resistive variable memory generally includes storage nodes capable of storing one byte, where the storage nodes are distributed in multiple rows and columns in a matrix array in the storage plane. The storage nodes are accessed through word lines across the rows of the storage plane and bit lines across the columns of the storage plane. [0004] In RRAM, each storage node typically includes a capacitive metal-oxide-metal (MOM) structure or memory ce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L45/00H01L23/522H10B69/00
CPCH01L23/5223H10B63/30H10B63/80H10N70/24H10N70/011H10N70/8833H10N70/063H10N70/826H10N70/821
Inventor P·波伊文
Owner STMICROELECTRONICS (ROUSSET) SAS