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Diode preparation method and diode

A technology for diodes and isolation oxide layers, applied in the preparation of diodes and in the field of diodes, can solve the problems of zero reverse recovery time, low on-state voltage drop, on-state voltage drop, etc., to achieve improved reliability, low leakage characteristics, Avoid the effects of ion implantation

Inactive Publication Date: 2017-11-14
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In related technologies, Schottky diodes have low on-state voltage drop, large leakage current, and almost zero reverse recovery time
The photodiode has a fast reverse recovery time, but its on-state voltage drop is high

Method used

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  • Diode preparation method and diode
  • Diode preparation method and diode
  • Diode preparation method and diode

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Embodiment Construction

[0029] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0030] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0031] figure 1 A schematic flowchart of a method for manufacturing a diode according to an embodiment of the present invention is shown.

[0032] Such as figure 1 As shown, the method for prepari...

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Abstract

The invention provides a diode preparation method and a diode. The diode preparation method comprises the steps of: sequentially forming a gate oxide layer, a polycrystalline silicon layer and an isolated oxide layer on an N-type substrate on which an N-type epitaxial layer is formed; adopting an isotropic corrosion technology for etching the isolated oxide layer; performing anisotropic etching on the polycrystalline silicon layer and the gate oxide layer based on a patterned mask in sequence, and etching a specified thickness of the N-type epitaxial layer continuously; removing the patterned mask to expose injection reserved regions of the polycrystalline silicon layer, and forming P-type body regions in the N-type epitaxial layer by means of injection windows; forming P-type channels in the N-type epitaxial layer under the injection reserved regions; removing the isolated oxide layer; and forming a metal electrode on the N-type substrate on which the isolated oxide layer is removed, so as to complete the preparation of the diode. By adopting the diode preparation method, the prepared diode has the advantages of low potential barrier, small reverse current, short reverse recovery time, high reverse blocking voltage and low conduction voltage drop.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a diode and a diode. Background technique [0002] Power diodes are key components of circuit systems, and are widely used in high-frequency inverters, digital products, generators, televisions and other civilian products, as well as satellite receivers, missiles and aircraft and other advanced weapon control systems and instrumentation equipment. Military occasions. There are two important directions for power diode expansion: [0003] (1) Developing to tens of millions or even tens of thousands of amperes, it can be applied to high-temperature arc wind tunnels, resistance welding machines and other occasions; [0004] (2) The reverse recovery time is getting shorter and shorter, and it is developing in the direction of ultra-fast, ultra-soft, and ultra-durable, so that it is not only used in rectification occasions, but also has diff...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L29/861H01L29/06
CPCH01L29/6609H01L29/0684H01L29/861
Inventor 李理赵圣哲马万里
Owner PEKING UNIV FOUNDER GRP CO LTD
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