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Method for in-situ growing graphene sensor substrate on hard alloy

A cemented carbide, in-situ growth technology, applied in the field of materials, can solve problems such as poor bonding force, reduced mechanical and electrical properties of graphene substrates, and graphene shedding, and achieve the effect of overcoming low sensitivity

Active Publication Date: 2017-11-21
CHINA UNIV OF GEOSCIENCES (BEIJING)
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Problems solved by technology

(2) Application problems caused by graphene sheet transfer
Defects such as impurities generated by transfer reduce the mechanical and electrical properties of the graphene matrix; the bonding force between the substrate and the substrate is poor, and graphene is easy to fall off from the surface of the substrate during use

Method used

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  • Method for in-situ growing graphene sensor substrate on hard alloy
  • Method for in-situ growing graphene sensor substrate on hard alloy
  • Method for in-situ growing graphene sensor substrate on hard alloy

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Embodiment Construction

[0029] In this example, the amorphous SiC film is deposited by magnetron sputtering on the surface of the Co-containing hard alloy, and the graphene sensor substrate required for space drilling is grown in situ on the surface of the hard alloy by vacuum annealing, and the Co-catalyzed SiC film is used to form a graphene matrix. Effect of medium annealing temperature and mechanism of action of Si atoms. Include the following steps:

[0030] 1. Sample preparation

[0031] 1) Select the substrate: the substrate is two kinds of sheets, the single crystal silicon wafer Si is used for the structural reference of the SiC film, and the cemented carbide YG8 (WC-Co 8%) is used for the structural analysis of the graphene substrate;

[0032] 2) Substrate pretreatment: The substrate was ultrasonically cleaned in acetone and absolute ethanol solutions for 10 minutes, dried with nitrogen and placed in a vacuum chamber to be deposited;

[0033] 3) Deposition of SiC: The SiC thin film was de...

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Abstract

The invention discloses a method for in-situ growing a graphene sensor substrate on a hard alloy. According to the method for in-situ growing the graphene sensor substrate on the hard alloy, an intermediate-frequency magnetron sputtering technology is adopted to deposit an amorphous SiC thin film on the surface of the hard alloy through magnetron sputtering, and in-situ growing of the graphene sensor substrate needed by space drilling is conducted on the surface of the hard alloy by utilizing vacuum annealing. The method can conduct in-situ growing of the graphene sensor substrate needed by space drilling on the surface of the hard alloy, the defects that a traditional sensor is low in sensitivity, short in life and prone to attenuating are overcome, a new synthetic method is provided for a graphene compound sensor for space drilling, and a new idea is provided for a metal catalysis SiC synthetic graphene research and application.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for in-situ growth of a graphene sensor substrate on cemented carbide. Background technique [0002] Space drilling is the only way to directly obtain planetary geological structure and mineral distribution information, and the acquisition of drilling information depends on sensors on the surface of cemented carbide drill tools. Graphene composite sensors are the best choice to deal with the shortcomings of traditional sensors such as low sensitivity, short life, and easy attenuation. Unfortunately, there is no recognized method for in-situ synthesis of graphene sensor substrates on the surface of cemented carbide to meet the space requirements. drilling needs. [0003] Fault detection such as drill stop, drill sticking, and drill tool wear in space drilling requires cemented carbide surface strain sensors to accurately feed back information such as torque...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58
CPCC23C14/0057C23C14/0635C23C14/35C23C14/5806
Inventor 于翔刘飞任毅张震
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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