Lightweight low-loss silicon carbide series refractory material and preparation method thereof

Abstract

The invention relates to a lightweight low-loss silicon carbide series refractory material and a preparation method thereof. Silicon carbide powder and a pore-forming agent are taken as raw materials for forming a green body; the green body generates a silicon carbide sintered body at high temperature; the surface of the silicon carbide sintered body is coated with a layer of dense silicon membrane. By using the pore-forming agent, relatively-high porosity of the silicon carbide series refractory material is ensured, thermal shock resistance of the material is improved, the weight of the material is reduced, and the cost of the raw materials is reduced. Due to the adoption of the silicon membrane layer, the contact between an internal material of the silicon carbide series refractory material and the outside can be effectively isolated, and further the oxidation resistance of the silicon carbide series refractory material is remarkably improved; whether the material is dense or not has no influence on stability and service life of the material. A used coating method is a conventional mature coating technology, stable, simple to control, convenient in control of the coating thickness, coating density or coating material and facilitates industrial production and application.

Description

technical field [0001] The present invention relates to a silicon carbide-based refractory material, in particular to a light-weight and low-loss silicon carbide-based refractory material and a preparation method thereof. Background technique [0002] SiC refractory material is a kind of high-quality refractory material that people have known for a long time. It has excellent high-temperature properties such as high strength, large thermal conductivity, good shock resistance, wear resistance, and corrosion resistance. It has many uses in metallurgy and other industrial sectors. In particular, silicon carbide is also an excellent deoxidizer, which can speed up the steelmaking speed, facilitate the control of chemical composition, and improve the quality of steel. However, the main crystal phase of silicon carbide is SiC, which is easy to oxidize. In order to solve this problem, various methods have been used to make the silicon carbide refractory material denser and reduce t...

AI Technical Summary

Problems solved by technology

However, reducing the porosity and increasing the density will reduce the thermal shock resistance coefficient of the material. In order to ensure an excellent thermal shock resistance coefficient, traditional refractory materials generally maintain a porosity of about 20%.

[0004] The Chinese patent with application number 93112548.0 discloses a high-density, low-porosity silicon nitride-silicon carbide-oxide system refractory material. It combines SiC refractory materials by adding alumina and yttrium oxide, and the density does not decrease. In some cases, the thermal shock resistance coefficient of the material is improved, but the addition of oxides in the material is 3-25wt%, and the addition of more than 3% oxides will increase the glass phase in the joint of the material, which is necessary as a refractory material A series of problems such as reduced creep resistance and shortened life