Quantum well infrared detector capable of adjusting absorption frequency and manufacturing method thereof

Abstract

The invention discloses a quantum well infrared detector capable of adjusting absorption frequency and a manufacturing method thereof. The quantum well infrared detector capable of adjusting absorption frequency comprises a substrate, a metal supporting layer, a quantum well unit and a piezoelectric material layer from bottom to top in sequence, and also comprises an upper electrode, a lower electrode and a piezoelectric electrode, wherein a groove is formed in the metal supporting layer positioned above the substrate, and a microbridge resonant cavity is formed by the groove and the quantum well unit; the piezoelectric material layer is positioned above the quantum well unit; the upper electrode and the lower electrode are connected to the highest layer and the lowest layer of the quantum well unit, and ohmic contact layers are formed in the areas, in contact with the quantum well unit, of the electrodes in an ion injection manner; and the piezoelectric electrode is connected to the piezoelectric material layer. According to the quantum well infrared detector capable of adjusting absorption frequency provided by the invention, the piezoelectric material layer is contained, and the energy band structure of the quantum well unit and the height of the microbridge resonant cavity are changed by adjusting the voltage of the piezoelectric material layer, so that the absorption frequency of incident light is adjusted.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to a quantum well infrared detector with adjustable absorption frequency and a manufacturing method thereof. Background technique [0002] The traditional interband light absorption refers to the transition from the valence band to the conduction band after electrons absorb photons, thereby generating a photogenerated electron-hole pair, and these photogenerated carriers are collected to form a photocurrent under the action of an external bias voltage. Fundamentals of semiconductor photodetectors based on interband absorption. This kind of absorption requires that the energy of the photon is greater than the forbidden band width of the material. For infrared light, the wavelength of infrared light is long and the corresponding energy is small. It requires the material to have a small forbidden band width for this kind of light absorption to occur. Therefore, In the process of manu...

AI Technical Summary

Problems solved by technology

Because the transmitted light occupies a certain proportion in the traditional quantum well detector, it leads to the low absorption efficiency of the traditional quantum well infrared detector

At the same time, due to the fixed structure of the quantum well unit, the traditional quantum well detector can only detect infrared light with a fixed wavelength range, which has great limitations in the application process, and cannot realize the absorption of various infrared light by adjusting its structure.

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