Method for manufacturing semiconductor epitaxial wafer and method for manufacturing solid-state imaging device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUMCO CORP
- Publication Date
- 2019-03-05
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a method for manufacturing a semiconductor epitaxial wafer and a method for manufacturing a solid-state imaging element. Background technique
[0002] Metal contamination is mentioned as a factor deteriorating the characteristics of a semiconductor device. For example, in a back-illuminated solid-state imaging device, metal mixed into a semiconductor epitaxial wafer serving as a substrate of the device becomes a factor that increases the dark current of the solid-state imaging device, causing a defect called a white damage defect. The back-illuminated solid-state imaging device takes in the light from the outside directly to the sensor by arranging the wiring layer and the like on the lower layer of the sensor part, and can capture clearer images or movies even in dark places. It is widely used in mobile phones such as digital video cameras and smartphones. It is therefore desirable to minimize white damage defects. ...