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Method for manufacturing semiconductor epitaxial wafer and method for manufacturing solid-state imaging device

A manufacturing method, epitaxial wafer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve insufficient problems and achieve the effect of high gettering capacity

Inactive Publication Date: 2019-03-05
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, these metal contaminations have been improved to some extent by replacing the constituent materials of the epitaxial growth furnace with materials with excellent corrosion resistance, etc., but this is not enough.

Method used

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  • Method for manufacturing semiconductor epitaxial wafer and method for manufacturing solid-state imaging device
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  • Method for manufacturing semiconductor epitaxial wafer and method for manufacturing solid-state imaging device

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Experimental program
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Embodiment

[0072] An n-type silicon wafer (diameter: 300 mm, thickness: 725 μm, dopant: phosphorus, dopant concentration: 5.0×10 14 atom / cm 3 ). Next, the C 3 h 5 Clusters are irradiated onto the surface of the silicon wafer to form a modified layer. The substrate temperature and the dose of carbon at this time were the conditions described in Table 1. The acceleration voltage per carbon atom is 23.4keV / atom, the beam current value is 800μA, the tilt (Tilt): 0°, and the twist (Twist): 0°.

[0073] The cross section around the modified layer immediately after cluster ion irradiation was observed by TEM. Table 1 shows the presence or absence of the amorphous layer, the average depth of the surface, and the thickness in each experimental example. As a representative, No.5 in Table 1 is expressed in figure 2 In (A), No.7 is shown in figure 2 (B). In addition, No. 13 and No. 14 are shown in image 3 (A), image 3 (B). In the figure, the whitish portion is seen to be an amorphous...

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Abstract

Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed in a state in which a temperature of the semiconductor wafer is maintained at lower than 25° C.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor epitaxial wafer and a method for manufacturing a solid-state imaging element. Background technique [0002] Metal contamination is mentioned as a factor deteriorating the characteristics of a semiconductor device. For example, in a back-illuminated solid-state imaging device, metal mixed into a semiconductor epitaxial wafer serving as a substrate of the device becomes a factor that increases the dark current of the solid-state imaging device, causing a defect called a white damage defect. The back-illuminated solid-state imaging device takes in the light from the outside directly to the sensor by arranging the wiring layer and the like on the lower layer of the sensor part, and can capture clearer images or movies even in dark places. It is widely used in mobile phones such as digital video cameras and smartphones. It is therefore desirable to minimize white damage defects. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/322H01L21/20H01L21/265H01L27/146
CPCH01L21/26566H01L21/02005H01L21/02381H01L21/0243H01L21/02447H01L21/02513H01L21/02532H01L21/0262H01L21/02658H01L21/26513H01L21/3221H01L21/324H01L27/1464H01L27/14687
Inventor 广濑谅奥山亮辅栗田一成
Owner SUMCO CORP
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