Method for manufacturing semiconductor epitaxial wafer and method for manufacturing solid-state imaging device

A manufacturing method, epitaxial wafer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve insufficient problems and achieve the effect of high gettering capacity
CN107431018BInactive Publication Date: 2019-03-05SUMCO CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SUMCO CORP
Publication Date
2019-03-05
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed in a state in which a temperature of the semiconductor wafer is maintained at lower than 25° C.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a method for manufacturing a semiconductor epitaxial wafer and a method for manufacturing a solid-state imaging element. Background technique

[0002] Metal contamination is mentioned as a factor deteriorating the characteristics of a semiconductor device. For example, in a back-illuminated solid-state imaging device, metal mixed into a semiconductor epitaxial wafer serving as a substrate of the device becomes a factor that increases the dark current of the solid-state imaging device, causing a defect called a white damage defect. The back-illuminated solid-state imaging device takes in the light from the outside directly to the sensor by arranging the wiring layer and the like on the lower layer of the sensor part, and can capture clearer images or movies even in dark places. It is widely used in mobile phones such as digital video cameras and smartphones. It is therefore desirable to minimize white damage defects. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More