Multi-layer composite passivation layer structure of bipolar circuit and its production process

A multi-layer composite and generation process technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of limited application, poor photoelectric performance, and poor step coverage ability, so as to improve the small current amplification factor and avoid stress migration , improve the effect of linearity
CN101710580BInactive Publication Date: 2011-12-14HANGZHOU SILAN INTEGRATED CIRCUIT
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
HANGZHOU SILAN INTEGRATED CIRCUIT
Publication Date
2011-12-14
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The present invention provides the multilayer composite passivation film structure of the Bipolar circuit, comprising the underlying silicon oxide film layer deposited on the surface of the silicon substrate and the silicon nitride film layer deposited on the silicon oxide film layer, the silicon oxide film layer A certain proportion of phosphine is doped in the layer, and the silicon oxide film layer is an undoped silicon dioxide layer, a doped phosphosilicate glass layer, and an undoped silicon dioxide layer in sequence. Simultaneously, the present invention also provides the multilayer composite passivation film production method of Bipolar circuit, utilizes the multilayer composite passivation film structure of Bipolar circuit realized by the present invention to have anti-scratch, anti-moisture, high density, low film stress, Higher gettering ability, better step coverage ability, excellent photoelectric performance, electrical characteristics and thermal stability, reducing soft breakdown and solving problems such as poor reliability.
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Description

technical field

[0001] The invention relates to a passivation layer structure and a passivation layer generation process in the field of semiconductor manufacturing, in particular to a multilayer composite passivation layer structure of a Bipolar circuit and a generation process method thereof. Background technique

[0002] Silicon oxide is widely used as a conventional passivation film structure in BiDolar circuits due to its relatively small stress on the silicon substrate and aluminum film. However, due to the shortcomings of silicon oxide such as radiation sensitivity, low scratch resistance, poor photoelectric performance, weak moisture resistance and mobile ion penetration, it is limited in special semiconductor processes and devices (such as silicon photoelectric application in conversion circuits, etc.). For the silicon oxide film formed by the conventional low-pressure chemical vapor deposition method, due to its better step conformality, in the double-layer wiring...

Claims

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