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Radio-frequency circuit structure and radio-frequency amplifier with radio-frequency circuit structure

A technology of radio frequency circuits and capacitors, which is applied to high-frequency amplifiers, amplifiers, components of amplifiers, etc., to achieve the effects of simple technology, simple structure, and improved power-added efficiency

Inactive Publication Date: 2017-12-15
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Radio frequency amplifier devices and circuits are widely used in radio systems for communication, navigation, identification, measurement and control, radio and television, remote sensing telemetry, radio astronomy, electronic countermeasures, etc. In these applications, the noise, gain, and power density of radio frequency amplifier devices or circuits , power-added efficiency and other indicators are more critical; in microwave, millimeter-wave radar, communication and other fields, related equipment has strict requirements on the power-added efficiency of amplifier devices and circuits. In the research of high-efficiency devices and circuits, RF circuit design Researchers usually start from the aspects of device matching, circuit topology, etc., while device and process researchers usually start from reducing device parasitic resistance, parasitic capacitance, reducing knee voltage, and increasing breakdown voltage; secondly, in RF devices and circuit applications In the current and voltage nonlinearity of the diode, people often use the nonlinearity of the current and voltage of the diode to pre-distort the triode. No researchers have used the nonlinearity of the capacitor voltage of the diode to improve the efficiency of the triode, nor have researchers seen the signal caused by the nonlinear junction capacitance at the input end of the triode. Start with the impact of phase expansion and waveform distortion on the power-added efficiency of devices, and related solutions or products to improve the power-added efficiency of triodes and amplifiers

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Embodiment Construction

[0018] The technical solution of the present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings.

[0019] The nonlinearity of the junction capacitance at the input terminal of the triode is caused by the characteristics that electrons accumulate near the junction when it is forward biased, and are depleted to the far junction when it is reverse biased. The nonlinearity of the junction capacitance at the input terminal affects the injection signal. The phase influence is large and leads to the distortion of the gate voltage waveform. The nonlinearity of the junction capacitance leads to the distortion of the voltage waveform at the input terminal of the triode and the increase of the conduction angle, which leads to the increase of the working current of the triode and the reduction of the power added efficiency of the transistor or amplifier circuit. On the basis of studying the relationship between the nonlinea...

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Abstract

The invention discloses a radio-frequency circuit structure and a radio-frequency amplifier with the radio-frequency circuit structure. The radio-frequency circuit structure comprises a triode, and a parallel structure of a reverse diode is added at the input end of the triode, wherein the diode has a nonlinear junction capacitance, and the junction direction of the diode is opposite to the junction direction of the input end of the triode; and a radio-frequency amplifier with any radio-frequency circuit structure mentioned above is built. The advantages of the invention comprise: compared with the classical efficiency increasing method, the invention has the advantages of simple technology, simple structure, easy integration of single chip and small chip area; and the invention greatly improves the power added efficiency of the radio-frequency amplifier or the circuit in the related applications, and is widely used in microwave, millimeter wave amplifier and circuit applications.

Description

technical field [0001] The present invention relates to a radio frequency amplifying circuit and device, in particular to a radio frequency circuit structure, and also relates to a radio frequency amplifying device with the circuit structure. Background technique [0002] Radio frequency amplifier devices and circuits are widely used in radio systems for communication, navigation, identification, measurement and control, radio and television, remote sensing telemetry, radio astronomy, electronic countermeasures, etc. In these applications, the noise, gain, and power density of radio frequency amplifier devices or circuits , power-added efficiency and other indicators are more critical; in microwave, millimeter-wave radar, communication and other fields, related equipment has strict requirements on the power-added efficiency of amplifier devices and circuits. In the research of high-efficiency devices and circuits, RF circuit design Researchers usually start from the aspects ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F3/189
CPCH03F1/3276H03F3/189
Inventor 韩克锋
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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