a current limiting diode

A diode and source technology, which is applied in the field of power semiconductors, can solve the problems that gallium nitride heterojunction material power diodes have not received enough attention, and achieve the effect of avoiding lattice damage and reducing adverse effects.

Active Publication Date: 2021-04-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaN heterojunction material power diodes have not received enough attention, especially GaN current-limiting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a current limiting diode
  • a current limiting diode
  • a current limiting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021]The invention has been described in detail in the invention, and details are not described herein again.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of semiconductors, and relates to a current limiting diode. The invention proposes a new type of current-limiting diode, which uses the technology of growing a charge recovery layer on a thin barrier AlGaN / GaN heterojunction to modulate two-dimensional electron gas. Under the premise of withstand voltage, the advantage of this structure is that the fluorine-based gas used in the etching of the charge recovery layer will hardly cause any etching effect on the barrier layer under the charge recovery layer, and finally self-termination can be realized at the AlGaN interface to achieve the opposite effect. The purpose of precise control of the barrier layer. The invention avoids etching the AlGaN layer and does not cause damage to the AlGaN layer, so the device has larger current density, higher electron mobility and lower on-resistance.

Description

Technical field[0001]The present invention belongs to the field of power semiconductor, and is related to a current limiting diode.Background technique[0002]Due to the high reverse breakdown voltage, the carrier concentration formed by the higher piezoelectric polarization effect and a large electron mobility, the gallium nitride power device has become one of the best choices for the next generation of high-frequency power devices. In recent years, AlgaN / GaN heterojunction enhanced HEMT devices have been widely studied. However, the hydrogenatium nitride heterojunction material power diode does not give sufficient attention, especially the gallium nitride limit diode.[0003]Due to the unprecedented development of the LED lighting industry, the demand for the current limiting diode (rectifier) ​​is also increasing. The current limiting diode is not only used for brightness control of LED lighting, but also for protecting power devices to avoid damage due to overcurrent and overload...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/41H01L29/861
CPCH01L29/0684H01L29/402H01L29/41H01L29/8611
Inventor 周琦胡凯董长旭朱厉阳张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap