Target material assembly and machining method thereof

A processing method and component technology, which is applied in the field of target components and its processing, can solve problems such as sputtering performance needs to be improved

Inactive Publication Date: 2017-12-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the sputtering performance of the prior art target assembly needs to be improved

Method used

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  • Target material assembly and machining method thereof
  • Target material assembly and machining method thereof
  • Target material assembly and machining method thereof

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Experimental program
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Embodiment Construction

[0035] It can be seen from the background art that the sputtering performance of the target assembly in the prior art needs to be improved. The reason for the analysis of the steps combined with target sputtering is:

[0036] The physical process of sputtering to prepare thin films includes the following six basic steps: 1. Positive argon ions are generated in the plasma of the high vacuum chamber and accelerated to the target with negative potential; Accelerated under the action of a magnetic field to gain momentum and bombard the sputtering surface of the target; 3. Ions knock out (or sputter) atoms from the target through physical processes; 4. Be knocked out (or sputter) Atoms migrate to the surface of the silicon wafer; 5. The sputtered atoms condense on the surface of the silicon wafer and form a thin film, compared with the target material, the thin film has substantially the same material composition as the target material; 6. Extra material is removed by vacuum pump....

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Abstract

The invention provides a target material assembly and a machining method thereof. The target material assembly comprises a backing plate, a target billet and an annular adsorption structure, wherein the backing plate comprises a welding area and a marginal area surrounding the welding area; the target billet is welded to the portion, located in the welding area, of the backing plate; and the annular adsorption structure is located in the portion, located in the marginal area, of the backing plate, surrounds the target billet, and comprises an annular adsorption groove, or the annular adsorption structure comprises an annular adsorption groove set, and the annular adsorption groove set comprises at least two annular adsorption grooves which are distributed in a concentric mode at intervals. The target material assembly provided by the invention comprises the annular adsorption structure which is located in the portion, located in the marginal area, of the backing plate, surrounds the target billet, and comprises one annular adsorption groove or the annular adsorption groove set, the annular adsorption groove set comprises the at least two annular adsorption grooves, in this way, in the sputtering process of a target material, re-sputtering materials can be stacked in the annular adsorption grooves, and accordingly, the situation that the re-sputtering materials are peeled off and fall onto a silicon wafer is reduced or avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target component and a processing method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, target components are mainly used in vacuum sputtering processes. The target assembly is composed of a target conforming to the sputtering performance and a back plate combined with the target. Since the film prepared by sputtering has the advantages of high hardness, low friction coefficient, good wear resistance and chemical stability, it has become the most common film forming process in the field of semiconductor preparation. [0003] The basic principle of the sputtering process is: the target component is bombarded by appropriate high-energy particles (such as electrons, particles or neutral particles), and the atoms on the sputtering surface of the target component are obtained by colliding with high-energy particles. Sufficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B23P15/00
CPCC23C14/3407B23P15/00
Inventor 姚力军潘杰相原俊夫王学泽徐礼升
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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