Preparation method of amorphous transparent conductive oxide thin film

Abstract

The invention discloses a preparation method of amorphous transparent conductive oxide thin film. The preparation method comprises the step of carrying out magnetron sputtering under the room temperature, and further comprises the steps of setting the target power density according to the preset power in the preparation process, and keeping the target power density unchanged; adjusting the magnetic field intensity and the target voltage to obtain the high-energy plasma particles with the energy higher than or equal to 100 eV; making the high-energy plasma particles bombard the surface of a target material to obtain sputtering atoms; making the sputtering atoms deposit on a base to obtain amorphous transparent conductive oxide thin film according to the preset deposition speed; and carryingout low-temperature annealing treatment on the amorphous transparent conductive oxide thin film. According to the preparation method of amorphous transparent conductive oxide thin film, grain boundary scattering, ionized impurity scattering and carrier scattering are greatly reduced, the influence caused by grain boundary scattering, ionized impurity scattering and carrier scattering to carrier mobility in amorphous transparent conductive oxide thin film obtained in the prior art is eliminated, and then, the purpose that the carrier mobility of TCO thin film is effectively improved on the premise that energy consumption is low is achieved.

Description

technical field [0001] The invention relates to the field of transparent conductive oxide films, in particular to a method for preparing an amorphous transparent conductive oxide film. Background technique [0002] Transparent conductive oxide (TCO) films have the dual advantages of transparency and conductivity, and are widely used in industries such as flat-panel displays, light-emitting diodes, and solar cells. TCO films with excellent performance must have high transmittance and lower resistivity. However, taking the application of solar cell industry as an example, the resistivity of TCO is directly proportional to the carrier concentration and carrier mobility, the carrier concentration decreases and the resistivity increases, resulting in a decrease in cell efficiency. Therefore, to improve the light transmittance of the TCO film while maintaining its good conductivity can only be achieved by increasing the mobility of the transparent conductive oxide film. Therefor...

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Problems solved by technology

[0004] However, high-temperature annealing or high-temperature deposition requires a lot of energy, and is incompatible with some product processes. For example, the preparation process temperature of SHJ (silicon heterojunction) solar cells cannot be higher than 240 ° C, so the existing technology will also use room temperature However, the TCO film obtained by this method is a microcrystalline film with a small grain size or a mixture of microcrystalline and amorphous, with quite a lot of grain boundaries, and the carrier The grain boundary scattering is quite serious, resulting in the carrier mobility generally maintained at 20cm 2 Lower level around / V-s

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