Solar cell production method
A technology for solar cells and silicon wafers, used in circuits, electrical components, and final product manufacturing, etc., can solve the problems of whitening and yellowing at the edges, and the thickness and color of the dry black silicon coating, so as to reduce the whitening of the edges, The effect of reducing the coating isolation rate and saving costs
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[0015] The present invention provides a method for preparing solar cells, which includes the following steps: pre-treatment steps for coating, anti-reflection coating and post-treatment steps for coating.
[0016] The silicon wafer processing steps before coating include: cleaning, texturing, diffusion, dephosphorization silicon glass, edge insulation and other steps.
[0017] The post-treatment steps of coating include: printing, sintering and other steps.
[0018] The anti-reflective coating step is specifically as follows: the silicon wafers that have undergone coating pretreatment are loaded into a non-film-saturated graphite boat for PECVD coating, where the graphite boat is used for 70 to 90 times, and the cleaning process is performed once, and the cleaning is completed The latter graphite boat is loaded into the PECVD tube for non-film saturation. After the non-film saturation is completed, it can continue to be used for silicon wafer coating.
[0019] Among them, the cleaning...
Embodiment 1
[0025] Cleaning: will contain trace boron and the size is 156×156mm 2 The P-type standard silicon crystal is cleaned.
[0026] Texturing: remove the mechanical damage layer of the silicon wafer and texture the surface to make the surface of the silicon wafer uneven, allowing sunlight to form multiple reflections and enhancing light absorption.
[0027] Diffusion: Place the silicon wafer in a quartz tube diffusion furnace, and first pass in oxygen to form SiO on the surface of the silicon wafer 2 Layer, then pass the reactive gas POCl 3 With O 2 , POCl 3 With O 2 Reaction produces P 2 O 5 , P 2 O 5 It reacts with silicon wafer to generate phosphorus atoms, which are deposited on SiO 2 Keep the temperature at 800~900℃ to make SiO 2 The phosphorous atoms in the silicon wafer are pushed into the silicon wafer to form a PN junction and complete the diffusion process.
[0028] Phosphorus-removed silica glass: The silicon wafers after the diffusion process are passed through containing HF, H...
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