Multi-octave ultra-broadband amplifier circuit

Abstract

The invention discloses a multi-octave ultra-broadband amplifier circuit, which comprises a cascode structure stacked by three transistors, an active-passive hybrid bias circuit and a power supply VDD, wherein the three transistors in the cascode structure are a transistor M1, a transistor M2 and a transistor M3 respectively, wherein the grids of the transistor M1, the transistor M2 and the transistor M3 and the active-passive hybrid bias circuit are all connected to the power supply VDD; the source of the transistor M1 is connected to the ground; the grid of the transistor M2 is connected tothe ground through a capacitor C2; and the grid of the transistor M3 is connected to the ground through a capacitor C3. The source of the transistor M2 is connected to the drain of the transistor M1,the drain of the transistor M2 is connected to the source of the transistor M3, and the drain of the transistor M3 is connected to the active-passive hybrid bias circuit. According to the multi-octaveultra-broadband amplifier circuit, the working frequency covers megahertz (MHz) to gigahertz (GHz), the bandwidth is equivalent to a distributed amplifier, and the unit circuit gain performance, thepower consumption and the chip area are better than a distributed structure.

Description

technical field [0001] The invention relates to the technical field of wireless radio frequency communication, in particular to a multi-octave ultra-wideband amplifier circuit. Background technique [0002] In recent years, with the development of high-speed data transmission, optical fiber communication, broadband electromagnetic spectrum monitoring, software radio, cognitive radio system, etc., broadband transceivers have become more and more widely used. Traditional broadband transceivers use multiple receivers covering different frequency bands to connect in parallel to achieve broadband coverage. Due to the use of receivers in different frequency bands, there will be multiple blocks of the same type of general-purpose modules (such as low-noise amplifiers, power amplifiers, etc.). This leads to a substantial increase in the size, cost, and power consumption of the device, and a significant reduction in reliability, which limits the popularization and application of broa...

AI Technical Summary

Problems solved by technology

However, the amplifier with distributed structure has the disadvantages of low unit circuit gain, power consumption and large chip area.

Therefore, it is of great significance to carry out research on broadband amplifiers whose bandwidth is comparable to that of distributed amplifiers, and which are better than distributed amplifiers in terms of unit circuit gain performance, power consumption, and chip area. However, there are few relevant circuit structures currently proposed

Images