EFPI fiber pressure sensor and manufacturing method thereof
A pressure sensor and pressure technology, applied in EFPI optical fiber pressure sensor and its production, silicon glass-based EFPI optical fiber pressure sensor and its production field, can solve the problem of increasing the difficulty and complexity of the manufacturing process, unable to guarantee the parallelism of the reflecting surface, affecting the transmission. Photosensitive signal quality and other issues, to reduce the complexity of the MEMS process, improve the signal quality, and achieve the effect of good parallelism
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Embodiment 1
[0035] An EFPI fiber optic pressure sensor, such as figure 1 , figure 2 As shown, a single-mode silica fiber is selected as the transmission fiber, a quartz hollow tube with an outer diameter of 2 mm and an inner diameter of 130 μm is used as a cylindrical hollow tube, and a double-polished single crystal silicon wafer with a thickness of 200 μm and a diameter of 4 inches is selected. BF33 glass sheet with a thickness of 500 μm and a diameter of 4 inches. Such as image 3 , Figure 4 , Figure 5 As shown, the pressure sensitive structure is composed of two layers, the upper unit 2 of the pressure sensitive structure and the lower unit 3 of the pressure sensitive structure.
[0036] A method for manufacturing an EFPI optical fiber pressure sensor: perform standard cleaning on a single crystal silicon wafer 12 and a glass wafer 15; process a blind hole array on the lower surface 13 of the single crystal silicon wafer, and form the blind hole bottom surface 11 with the The ...
Embodiment 2
[0040] In the manufacturing process of the pressure sensitive structure in Example 1, the anodic bonding process in a vacuum environment is changed to the anodic bonding in a local atmospheric pressure environment, so as to realize the manufacturing of the sensitive structure of the gauge pressure sensor.
Embodiment 3
[0042] Such as Figure 7 As shown, in the process of making the pressure-sensitive structure in Example 1, the bottom surface 11 of the blind hole on the single crystal silicon wafer 12 is plated with a glass reflective film 17 with a reflectivity of 4%, and anodic bonding is carried out in a vacuum environment Completed the making of the Fapo microcavity 1: the upper surface 14 of the glass wafer is the first reflection surface of the Fapo microcavity 1, the glass reflective film 17 is the second reflection surface of the Fapo microcavity 1, and the depth of the blind hole is is the cavity length of Fapp microcavity 1. In this way, the contrast ratio of the interference signal returned by the sensor is improved, and the demodulation of the instrument signal is facilitated.
[0043] Embodiment 3 Sensor and the uncoated sensor spectral test contrast such as Figure 8 shown. The sensor spectrum of embodiment 3 is improved in contrast.
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