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Organic light emitting display (OLED) panel and fabrication method thereof

A manufacturing method and panel technology, applied in semiconductor/solid-state device manufacturing, diodes, semiconductor devices, etc., can solve the problems affecting the aperture ratio and small storage capacitor capacity, so as to increase the aperture ratio, increase the storage capacitor, and reduce the design area Effect

Active Publication Date: 2018-02-09
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the current top gate (Top gate) oxide TFT design, the storage capacitor is composed of an indium tin oxide (ITO)-second metal layer (Metal2)-amorphous oxide semiconductor (AOS) structure, but due to the gap between Metal2 and ITO The interlayer is two layers of passivation layer (PV) and flat layer (PLN) (see figure 1 ), and the thickness of the two layers is relatively large, the capacity of the storage capacitor is small in the same area, in order to meet the demand of increasing the storage capacitor, the area of ​​the storage capacitor can only be increased, which will seriously affect the aperture ratio

Method used

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  • Organic light emitting display (OLED) panel and fabrication method thereof
  • Organic light emitting display (OLED) panel and fabrication method thereof
  • Organic light emitting display (OLED) panel and fabrication method thereof

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Embodiment Construction

[0032] see figure 2 , which is a structural diagram of a preferred embodiment of the OLED panel of the present invention, which can be divided into a switching TFT area, a driving TFT area, and a storage capacitor area according to functional areas. The OLED panel of the present invention mainly includes: a glass substrate 20; a TFT light-shielding layer 21 fabricated on the glass substrate 20; a buffer layer 22 deposited on the TFT light-shielding layer 21; a semiconductor layer 23 deposited on the buffer layer 22, and a semiconductor layer 23 Patterned as the TFT active layer; the gate insulating layer 24 and the first metal layer 25 deposited on the semiconductor layer 23, the gate insulating layer 24 and the first metal layer 25 are patterned to form the gate of the TFT , and the semiconductor layer 23 outside the area covered by the first metal layer 25 is subjected to conducting treatment, such as increasing the doping concentration in the area where the semiconductor l...

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Abstract

The invention relates to an organic light emitting display (OLED) panel and a fabrication method thereof. The OLED panel comprises a glass substrate, a thin film transistor (TFT) shading layer, a buffer layer, a semiconductor layer, a grid insulation layer, a first metal layer, an inter-layer insulation layer, a second metal layer, a passivation layer, a color filter, a flat layer, a positive electrode, a pixel limiting layer, a light emitting layer and a negative electrode, wherein the grid insulation layer and the first metal layer are deposited on the semiconductor layer and are processed by patterning, the interlayer insulation layer is deposited on the first metal layer, the second metal layer is deposited on the interlayer insulation layer and is processed by patterning, the passivation layer is deposited on the second metal layer in an atomic layer deposition mode and is a thin film of a high-dielectric constant material, via holes are formed in the passivation layer, the colorfilter, the flat layer, the positive electrode and the pixel limiting layer are fabricated on the passivation layer, an opening structure is arranged at a position, corresponding to a storage capacitance region, of the flat layer, the light emitting layer is fabricated on the positive electrode, and the negative electrode is fabricated on the light emitting layer. The invention also provides the corresponding fabrication method of the OLED panel. By the OLED panel and the fabrication method thereof, the storage capacitance of the OLED panel can be effectively improved, the storage capacitancedesign area can be reduced, and the aperture ratio of the panel is favorably improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an OLED panel and a manufacturing method thereof. Background technique [0002] Organic light-emitting diode (OLED) display devices have self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, and wide operating temperature range, which can realize flexible display and large-area full-color display And many other advantages, it is recognized by the industry as the display device with the most development potential. According to the driving method, OLED display devices can be classified into two categories: passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED). Among them, AMOLED has pixels arranged in an array, belongs to the active display type, has high luminous efficiency, and is usually used as a high-definition large-size display device. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L21/77
CPCH01L21/77H10K59/1216H01L27/1255H10K59/38H10K59/124H10K59/126H10K59/122H01L29/78693H10K50/11H10K50/84H10K59/1213H10K71/00
Inventor 刘兆松徐源竣
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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