Multi-stage crucible device used for aluminum nitride single crystal growth

Abstract

The invention discloses a multi-stage crucible device used for aluminum nitride single crystal growth. The device is arranged on a supporting platform and comprises a crucible body, a crucible cover and at least one crucible sleeve which is detachably arranged between the crucible body and the crucible cover, wherein the crucible sleeve comprises a sleeve body, a first connecting part which is connected to the upper end of the sleeve body and used for fixing the crucible cover, and a second connecting part which is connected to the lower end of the sleeve body and used for fixing the cruciblebody; when there are at least two crucible sleeves, the second connecting part of the crucible sleeve on the upper portion is fixed to the first connecting part of the crucible sleeve on the lower portion. By means of the crucible device, the height of the crucible body can be flexibly adjusted according to actual crystal growth requirements, and a stable and continuous material flow supply is provided for the long-time crystal growth process. The crucible device is designed into a multi-stage detachable structure, after the long-time crystal growth is completed, by removing the crucible sleeve on the lower portion of the crucible body, it is ensured that the crucible body is normally opened, crystals are completely taken out and the crucible body is recycled.

Description

technical field [0001] The invention relates to a multi-stage crucible device for growing aluminum nitride single crystal. Background technique [0002] The third-generation semiconductor material, aluminum nitride (AlN), has a bandgap width of 6.2eV, has unique advantages in the ultraviolet / deep ultraviolet light-emitting band, and is one of the best substrate materials for ultraviolet LEDs. At the same time, because of its high breakdown field strength, high saturated electron drift rate, good thermal conductivity, stability and radiation resistance, AlN can also meet the design requirements of high temperature / high frequency / high power electronic devices, It has great application potential in the fields of electronics, printing, biology, medical treatment, communication, detection, and environmental protection. [0003] It is hardly soluble in any liquid, and its theoretically calculated melting point is above 2800°C, which cannot be obtained by traditional solution or m...

AI Technical Summary

Problems solved by technology

Restricted by the total mass of aluminum nitride powder source / aluminum nitride sintered body in the crucible, in most cases, the crystal growth experiment cannot maintain a long growth period, and the furnace can only be cooled down before the raw materials are exhausted, and then the raw materials are replenished. reheating crystal growth

However, the additional furnace opening process will introduce more impurities and destroy the original stable crystal growth environment. At the same time, excessive heating and cooling operations will also increase the impact of thermal stress on crystal quality, and the working hours and costs will also increase. the increase

In addition, in the long-term crystal growth experiment, the gaps at the joints of the crucible parts are easily covered by desublimation substances, and there are negative pressures inside the crucible during the cooling process. The above factors will cause the crucible to fail to open normally or the crucible to permanently Destruction, and the problem that the crystal cannot be completely taken out

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