Semiconductor structure and formation method thereof

Abstract

The invention provides a semiconductor structure and a formation method thereof. The formation method comprises the following steps: providing a substrate, wherein the substrate comprises device areasand an isolation area, the device area substrate having fin portions and an initial isolation structure, the initial isolation structure covering side walls of the fin portions, the side walls, adjacent to the isolation area, of the initial isolation structure and the isolation area substrate forming an isolation groove; carrying out ion implantation on the side walls of the isolation groove to inject doping ions, and forming a barrier layer on the surfaces of the side walls of the isolation groove; after ion implantation, forming an isolation layer filling the isolation groove; and after forming the isolation layer, etching the initial isolation structure to expose the top portions and partial side wall surfaces of the fin portions and forming an isolation structure. The formation methodcan reduce the problem of inconsistency of fin portion width, and thus the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors are currently being widely used as the most basic semiconductor devices. As the component density and integration of semiconductor devices increase, the size of transistors is also getting smaller. [0003] A Fin Field Effect Transistor (FinFET) has intersecting fins like fish fins, which can improve the integration of semiconductor devices. Moreover, the gate structure of the fin field effect transistor can control the channel of the transistor from both sides of the fin, thereby increasing the control of the carriers in the channel of the transistor, which is beneficial to reducing the leakage curre...

AI Technical Summary

Problems solved by technology

The width of the fin in the FinFET is very small, and a small change in the width of the fin will easily affect the performance of the FinFET

[0005] However, in the semiconductor structure formed in the prior art, the fin widths of different FinFETs are inconsistent, resulting in inconsistent performance of different FinFETs

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