A new type of resistive memory and its manufacturing method

Abstract

The invention discloses a novel resistive variable memory and a manufacturing method thereof, comprising a silicon wafer substrate, a back electrode, a silicon dioxide protective layer above the silicon wafer substrate, and several cylindrical recesses etched on the silicon dioxide protective layer. The contact between the cavity and the silicon wafer substrate is a resistive medium layer, above the resistive medium layer is a silicide layer, above the silicide layer and the inner wall of the corresponding cavity is an anti-metal diffusion layer, inside the anti-metal diffusion layer is Metal top electrode. The resistive variable memory cell obtained in the present invention has excellent and stable resistance transition characteristics. By introducing the silicide layer, the barrier resistance between the upper electrode and the resistive variable medium layer is reduced, so that the resistance transition of the resistive variable medium layer is not affected by the above. The influence of the electrode material further improves the stability of the memory cell.

Description

Technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuits, and particularly relates to a novel resistive random access memory and a manufacturing method thereof. Background technique [0002] At present, the world's advanced memory manufacturers are mass-producing 3D NAND memory. This is because the storage capacity per unit area of ​​the previous generation of planar flash memory has reached the physical limit. Due to the continuous reduction of physical size, traditional flash memory has the problem of reduced reliability due to charge leakage. In addition, people have put forward higher and higher requirements on electronic products, including key parameters such as read / erase speed, capacity, and reliability. . 3D NAND memory is developed on the basis of planar NAND memory (ie, 2D NAND memory), which has significantly improved the storage capacity of flash memory. But the real breakthrough in storage parameters such as read...

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Problems solved by technology

[0005] However, there are still several problems in the preparation of transition metal oxide resistive memory by using standard CMOS integrated circuit technology: the raw materials of the resistive dielectric layer currently used are rare elements, with limited reserves and high prices; The influence of the mechanism complicates the resistive switching mechanism and increases the difficulty of controlling the performance of the resistive variable memory; if the resistive variable memory unit, especially the resistive variable dielectric layer, is in contact with air, the oxygen or water vapor in the air will adhere to the resistive variable memory. around the dielectric layer, and then diffuse into the resistive dielectric layer to affect the stability of the resistive memory unit

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