Vertical-cavity surface-emitting semiconductor laser and manufacturing method thereof

Abstract

The invention discloses a vertical-cavity surface-emitting semiconductor laser and a manufacturing method thereof. A P type electrode structure comprises a transparent insulating layer, a transparentconducting layer and a grid electrode, wherein the transparent insulating layer and the grid electrode are provided with preset pattern structures to form a plurality of light outlets in array arrangement; for light outlet edge areas, high order modes of the light outlet edge areas can be eliminated by destructive interference, loss of the high order modes is increased, and loss of the air outletedge areas to a basic mode is smaller; an opening of a square frame serves as a central area of a through hole, only one transparent conducting layer is arranged on the central area, the transparent conducting layer in the central area is directly in contact with a P type DBR structure under the transparent conducting layer, current can be injected by the transparent conducting layer under the grid electrode, grain of the basic mode is increased, and gain of a set high order mode is smaller; thus, high-power and high-stability single mode emission can be achieved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, in particular to a vertical cavity surface emitting semiconductor laser and a manufacturing method thereof. Background technique [0002] Vertical cavity surface emitting laser is a new type of laser. Due to its good laser stability, coherence and beam quality, it is widely used in laser lighting, spectrometer, sensor, biomedicine, optical communication and other fields. With the further development of these fields, there are more and more requirements for semiconductor lasers (VCSEL). For example, laser lighting, lidar and other fields require high-power and high-efficiency VCSELs, and atomic clocks, optical communications and other fields require single-mode, high-beam Quality VCSELs. In recent years, the demand for high-power and high-efficiency single-mode output VCSELs has also increased. [0003] In order to obtain high power output, the light exit aperture of a sing...

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Problems solved by technology

[0003] In order to obtain high power output, the light exit aperture of a single-tube vertical cavity surface emitting laser generally needs to be hundreds of microns, but the large-diameter light exit is likely to cause uneven current density at each point in the hole, especially the oxidation hole in the oxidation-limited layer. The current focusing phenomenon is easy to appear in the vicinity, resulting in uneven light emission in the light exit hole, forming a large far-field divergence angle, and affecting the beam quality of the laser

And in order to realize the single-mode output, there are usually two ways: (1) increase the mode gain difference, so that the gain of the fundamental mode is higher than the gain of the higher-order mode, and then achieve a single fundamental mode and a single vertical mode through a higher single-mode rejection ratio. mode lasing; (2) increase the mode loss difference, each mode of light will be lost during the propagation process, if the loss of the high-order mode can be realized greater than the loss of the fundamental mode, then single fundamental mode lasing can also be achieved

[0004] In the existing technology, VCSEL cannot achieve single-mode compatibility with high power and high efficiency, and can be mass-produced and applied

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