A method for preparing graphene film by ultra-high pressure thermal reduction

A graphene film, graphene film technology, applied in graphene, nano carbon and other directions, can solve problems such as serious energy consumption, reduce thermal conductivity, affect stability and durability, and achieve perfect structure, high electrical conductivity and thermal conductivity. The effect of sex, dense structure

Active Publication Date: 2019-08-20
HANGZHOU GAOXI TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But at present, the macroscopic assembly of graphene membranes requires a high-temperature sintering process of 3000 degrees.
This process consumes a lot of energy, easily damages the furnace body, and is prone to safety accidents; and the high-temperature process will cause the gas to enter the graphene film, which will easily cause the graphene film to be less dense, affecting the stability and durability of its application; Will introduce excessive wrinkles, reduce AB structure content and further reduce thermal conductivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing graphene film by ultra-high pressure thermal reduction
  • A method for preparing graphene film by ultra-high pressure thermal reduction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) A single layer of graphene oxide is formulated into an aqueous solution with a concentration of 6 mg / mL, and the solution is naturally dried after forming a film, and then reduced with a reducing agent.

[0022] (2) The reduced graphene film is heated to 300°C at a rate of 0.1°C / min under a hot press, kept for 2h and naturally cooled down; the pressure is maintained at 5GPa throughout the process.

[0023] (3) The above-mentioned graphene film is heated to 1500°C at a rate of 1°C / min under an inert gas atmosphere and kept for 6 hours; the pressure is maintained at 10 GPa throughout the process.

[0024] The obtained graphene film has an AB structure content of 95% and a conductivity of 9300 S / cm.

Embodiment 2

[0026] (1) A single layer of graphene oxide is formulated into an aqueous solution with a concentration of 30 mg / mL, and the solution is naturally dried after forming a film, and then reduced with a reducing agent.

[0027] (2) The reduced graphene film is heated to 400°C at a rate of 5°C / min under a hot press, kept for 0.5h and cooled naturally; the pressure is maintained at 0.5GPa throughout the process.

[0028] (3) The above-mentioned graphene film is heated to 1800°C at a rate of 20°C / min under an inert gas atmosphere for 0.5h; the pressure is maintained at 3GPa throughout the process.

[0029] The obtained graphene film has an AB structure content of 90% and a conductivity of 8500 S / cm.

Embodiment 3

[0031] (1) A few layers of graphene (1-10 layers) or graphite micro-nano flakes (thickness less than 100nm) are formulated into an aqueous solution with a concentration of 16 mg / mL, and the solution is naturally dried after forming a film.

[0032] (2) The graphene film is heated to 350°C at a rate of 1°C / min under a hot press, kept for 1 hour and naturally cooled down; the pressure is maintained at 2GPa throughout the process.

[0033] (3) The above-mentioned graphene film is heated to 1600°C at a rate of 10°C / min under an inert gas atmosphere for 2 hours; the pressure is maintained at 5 GPa throughout the process.

[0034] The AB structure content of the obtained graphene film is 92.3%, and the conductivity is 8800 S / cm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
breaking strengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a graphene film by ultra-high pressure thermal reduction. The graphene film is obtained by solution cast film, chemical reduction, the ultra-high pressure thermal reduction and the like of large-flake graphene oxide, few-layer graphene or nano-scale graphite microchip. The graphene film has the advantages of high orientation, compact structure and certain flexibility; and a graphene sheet layer has a perfect structure, hardly contains defects and has relatively-high electrical conductivity and thermal conductivity and thermal conductivity.

Description

Technical field [0001] The invention relates to a novel thermally conductive material and a preparation method thereof, in particular to a method for preparing graphene film by ultra-high pressure thermal reduction. Background technique [0002] In 2010, two professors, Andre GeiM and Konstantin Novoselov, from the University of Manchester in the United Kingdom, won the Nobel Prize in Physics for successfully separating stable graphene for the first time, setting off a worldwide upsurge in graphene research. Graphene has excellent electrical properties (the electron mobility can reach 2×10 at room temperature 5 cM 2 / Vs), outstanding thermal conductivity (5000W / (MK), extraordinary specific surface area (2630M) 2 / g), its Young's modulus (1100GPa) and breaking strength (125GPa). The excellent electrical and thermal conductivity of graphene completely exceeds that of metal. At the same time, graphene has the advantages of high temperature and corrosion resistance, and its good mech...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 高超彭蠡
Owner HANGZHOU GAOXI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap