LED epitaxial structure and preparation method thereof

A technology of epitaxial structure and nucleation structure, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor light extraction efficiency, uneven coarsening yield, and low refractive index

Active Publication Date: 2018-03-06
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] See attached figure 1 At present, the GaN-based blue LED epitaxial structure generally includes a substrate, a buffer layer, a first semiconductor layer, a multi-quantum well light-emitting layer, a final barrier layer, an electron blocking layer, and a second semiconductor layer. The multi-quantum well light-emitting layer is generally InGaN / GaN superlattice structure, the electron blocking layer is a P-type AlGaN structure, but because the refractive index of AlGaN material is lower than that of GaN and InGaN, the light emitted in the multi-quantum well light-emitting layer is easy to pass through the interface between the final barrier layer and the electron blocking layer. Total reflection occurs at the place, resulting in poor light extraction efficiency
[0004] In the prior art, in order to improve the light extraction efficiency, the surface roughening technology of the P-type layer is also used. Although this technology can improve the light extraction efficiency to a certain extent, it cannot improve the light emission caused by the phenomenon at the interface between the final barrier layer and the electron blocking layer. The loss of extraction efficiency, and because the surface roughening technology is prone to uneven roughening, the yield rate is poor and the color difference between the P electrode and the N electrode of the LED is caused, which makes it difficult to identify the automatic wire bonding machine
[0005] Another common technology to improve the light extraction efficiency is to use a patterned substrate. Although this technology can improve the light extraction efficiency to a certain extent without affecting the wiring, it cannot completely improve the interface between the final barrier layer and the electron blocking layer. The loss of light extraction efficiency caused by total reflection phenomenon

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  • LED epitaxial structure and preparation method thereof
  • LED epitaxial structure and preparation method thereof

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Embodiment 1

[0038] This implementation provides a kind of LED epitaxial structure, refer to the attached figure 2 The epitaxial structure includes a substrate 1, a buffer layer 2, a first semiconductor layer 3, a multi-quantum well light-emitting layer 4, a final barrier layer 5, and a plurality of discontinuously arranged island structures 9 located on the substrate 1 in sequence. , the electron blocking layer 6 and the second semiconductor layer 7 .

[0039] The discontinuously arranged island-like structures 9 are 3D island-like structures 9 whose shape is conical or truncated conical or yurt or polygonal prism or a combination of any two, three or four of the aforementioned shapes. In this embodiment, as attached figure 2 As shown, the shape of the island structures 9 is a combination of polygonal columns and polygonal pyramids, and the distance between the bottom of adjacent island structures 9 is greater than the distance between the tops, so that the light entering the island st...

Embodiment 2

[0044] The embodiment of the present invention proposes a method for preparing an LED epitaxial structure, which is suitable for manufacturing the LED epitaxial structure provided in Example 1. Please refer to the attached image 3 , the preparation method comprises:

[0045] Step 1, first provide a substrate 1, the substrate 1 is a patterned substrate 1, specifically a sapphire patterned substrate 1;

[0046] Step 2, sequentially depositing a buffer layer 2 and a first semiconductor layer 3 on the substrate 1;

[0047] The buffer layer 2 is a GaN buffer layer 2 or an AlN buffer layer 2 or an AlGaN buffer layer 2, and the first semiconductor layer 3 is an N-type layer, which is mainly used to provide electrons.

[0048] Step 3, depositing a multi-quantum well light-emitting layer 4 and a final barrier layer 5 on the first semiconductor layer 3;

[0049] The multi-quantum well light-emitting layer 4 is a superlattice structure in which GaN quantum barrier layers and InGaN quant...

Embodiment 3

[0058] See attached Figure 4 The difference between the LED epitaxial structure provided in this embodiment and the LED epitaxial structure provided in the embodiment is that there are a plurality of nucleation structures serving as the core of the island structure 9 between the barrier layer 5 and the island structure 9 8. The nucleation structure 8 serves as the nucleation center of the island structure 9 , and its size is smaller than that of the island structure 9 .

[0059] Specifically, the LED epitaxial structure provided in this embodiment includes: a substrate 1, a buffer layer 2 located on the substrate 1, a first semiconductor layer 3, a multi-quantum well light-emitting layer 4, a final barrier layer 5, and a nucleation structure 8. Island structure 9 , electron blocking layer 6 and second semiconductor layer 7 .

[0060] Wherein, the material of the nucleation structure 8 is a magnesium nitride compound, the refractive index of the island structure 9 is greater ...

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Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to an LED epitaxial structure and a preparation method thereof. In the invention, a plurality of magnesium nitride compound nucleation structures are inserted between an electron blocking layer and the last barrier layer; by taking the nucleation structures as the core, a plurality of island structures are grown to reduce the total reflection of light at the interface between the electron blocking layer and the last barrier layer, so that the light emitted from a multi-quantum well light emitting layer enters the electron blocking layer more and the light emitting efficiency of the LED epitaxial structure is further improved; and the island structures are filled through the electron blocking layer, andthen the LED epitaxial structure with a flat surface is obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an LED epitaxial structure and a preparation method thereof. Background technique [0002] LED is a semiconductor solid-state light-emitting device, which uses a semiconductor P-N junction as a light-emitting structure. Gallium nitride is currently regarded as the third-generation semiconductor material, and gallium nitride-based light-emitting diodes with InGaN / GaN active regions are regarded as the most advanced Potential light source. [0003] See attached figure 1 At present, the GaN-based blue LED epitaxial structure generally includes a substrate, a buffer layer, a first semiconductor layer, a multi-quantum well light-emitting layer, a final barrier layer, an electron blocking layer, and a second semiconductor layer. The multi-quantum well light-emitting layer is generally InGaN / GaN superlattice structure, the electron blocking layer is a P-type AlGaN ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/00H01L33/20
Inventor 程志青宋长伟徐志波林兓兓蔡吉明
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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