Manufacturing method of vertical structure thin film transistor and vertical structure thin film transistor

Abstract

Provided is are manufacturing method of a vertical-structure thin film transistor and the vertical-structure thin film transistor. The manufacturing method comprises the steps of providing a substrate (210) (S110); respectively forming a first insulation layer (220) and a second metal layer (230) on the substrate (210), and patterning the first insulation layer (220) and the second metal layer (230) to respectively form a raised insulation layer (220) and a source (231) by a first photomask; forming an oxide semiconductor layer (240) on the source (231) and the substrate (210), patterning the oxide semiconductor layer (240) to form an active layer (241) by a second photomask, and doping hydrogen ions to a part of region of the oxide semiconductor layer (240) to form doping layers (242, 244) arranged at two sides of the active layer (S130); and sequentially forming a second insulation layer (250), a first metal layer (260) and a third insulation layer (270) on the active layer (241) and the doping layers (242, 244), and patterning the third insulation layer (270), the first metal layer (260) and the second insulation layer (250) to form a passivation protection layer (271), a grid (261) and a grid insulation layer (251) by a third photomask. The manufacturing method has the advantage that the process of the vertical-structure thin film transistor is simplified.

Description

technical field [0001] The invention relates to the field of thin film transistor liquid crystal display, in particular to a method for manufacturing a vertical structure thin film transistor and the vertical structure thin film transistor. Background technique [0002] Existing thin film transistor liquid crystal display devices include thin film transistors. Generally speaking, the thin film transistors are BCE structure thin film transistors or Top-gate structure thin film transistors. Thin film transistor, the structure of this kind of vertical thin film transistor please refer to figure 1 , the thin film transistor of this structure includes film layers such as substrate 110, source electrode 120, flat layer 130, first insulating layer 140, pixel electrode 150, active layer 160, gate insulating layer 170 and gate 180, and this kind of vertical The channel width of the thin film transistor of the structure can be made very narrow, and the on-state current can be increas...

AI Technical Summary

Problems solved by technology

However, at present, the manufacturing process of this kind of vertical structure thin film transistor is complicated, generally requires more than 5 photomasks, and the cost is high

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