Preparation method of semiconductor laser material

Abstract

The invention discloses a preparation method of a semiconductor laser material, which comprises the steps of providing a semiconductor donor substrate, epitaxially growing a buffer layer on the donorsubstrate, growing a sacrificial layer on the buffer layer, and growing a semiconductor film layer on the sacrificial layer; performing ion implantation at the side of the semiconductor film layer, and forming a defect layer in the sacrificial layer; providing a flexible substrate, and enabling the semiconductor film layer to be bonded with the flexible substrate; performing annealing processing on the defect layer, stripping a top film from the donor substrate along the sacrificial layer to obtain a first substrate containing the donor substrate and a second substrate containing the flexiblesubstrate, removing the sacrificial layer on the second substrate to obtain a flexible substrate bonded with the semiconductor film layer. According to the preparation method of the semiconductor laser material, the donor substrate can be reused, and the thinning process is saved.

Description

technical field [0001] The invention belongs to the application field of semiconductor laser technology, and in particular relates to a method for preparing a semiconductor laser material which can be reused as a donor substrate and does not require a thinning process. Background technique [0002] Since the first ruby ​​pulsed semiconductor laser came out in 1960, semiconductor lasers have developed rapidly. Due to its wide wavelength range, simple manufacture, low cost, easy mass production, and due to its small size, light weight and long life, therefore, The variety develops rapidly and has a wide range of applications, covering the entire field of optoelectronics, and has become the core technology of today's optoelectronic science. [0003] Semiconductor lasers have been widely used in laser ranging, laser radar, laser communication, laser simulation weapons, laser warning, laser guidance and tracking, ignition and detonation, automatic control, detection instruments, ...

AI Technical Summary

Problems solved by technology

However, the surface roughness caused by the spallation process brings great troubles to the follow-up work. If the spallation layer is used as a sacrificial layer and treated by etching, it will also add more processes and even easily introduce impurity particles.

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