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Layered high-compatibility NAND flash-memory control system and method

A flash memory control and compatibility technology, applied in the field of operation control and management of NAND flash memory storage media, to achieve high compatibility

Pending Publication Date: 2018-04-17
MAXIO TECH (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the compatibility of different NAND flash memory particles is a serious challenge for the NAND flash memory control system

Method used

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  • Layered high-compatibility NAND flash-memory control system and method
  • Layered high-compatibility NAND flash-memory control system and method
  • Layered high-compatibility NAND flash-memory control system and method

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Embodiment Construction

[0027] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0028] Such as figure 1 as shown, figure 1 A frame diagram of a highly compatible hierarchical NAND flash memory control system applying the present invention is described. The system consists of a NAND flash memory operation configuration unit, a NAND flash memory operation management unit, a NAND flash memory command configuration unit, a NAND flash memory command management unit, a NAND flash memory interface configuration unit, and a NAND flash memory interface drive unit.

[0029] The NAND flash memory control system of the present invention can configure NAND flash memory management on three levels, which are respectively the flow definition of the operation layer to the NAND flash memory operation; the comma...

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Abstract

The invention relates to a layered high-compatibility NAND flash-memory control system and method, which are used for adapting various types of NAND flash-memory particles provided by various manufacturers. The NAND flash-memory control method divides NAND flash-memory control into three levels of: 1, an operation layer, which is responsible for managing operation processes of the multiple NAND flash-memory particles in parallel; 2, a command layer, which is responsible for processing NAND flash-memory command sets; and 3, a physical layer, which is responsible for driving an NAND flash-memoryinterface bus. For an NAND flash-memory operation instruction received by the NAND flash-memory control system, the flash-memory operation layer splits a flash-memory operation into flash-memory commands according to a configured command time sequence and configured process control of the NAND flash-memory operation, and sends the same to the flash-memory command level, and the operation layer can carry out parallel process control on multiple flash-memory operations; the flash-memory command layer splits the flash-memory commands into flash-memory bus status sequences according to the configured bus control sequences of the flash-memory commands, and sends the same to the flash-memory physical-layer; and the flash-memory physical-layer controls flash-memory interface bus status accordingto configured bus behaviors of flash-memory interfaces, and drives the NAND flash-memory interface bus.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a system and method for operation control and management of NAND flash memory storage media. Background technique [0002] With the development of the Internet and electronic devices, the amount of data information is increasing rapidly like a tide, and data storage is facing the dual challenges of massive data and high-speed access. NAND flash memory can provide high data storage density and high data access speed, and is widely used in portable electronic device memory cards, solid state drives, enterprise storage, cloud storage and other fields. [0003] In order to pursue the high storage density of NAND flash memory, in addition to improving the process flow to reduce the size of the storage unit, flash memory manufacturers have also improved the storage structure to store more data bits in a single storage unit, for example, the original SLC (Single Level Cell) means that a sto...

Claims

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Application Information

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IPC IPC(8): G06F13/16
CPCG06F13/1668
Inventor 方小玲许伟胡民潘永斌骆国庆李国阳
Owner MAXIO TECH (HANGZHOU) CO LTD
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