Silicon-based lithium niobate hybrid integrated electro-optic modulator compatible with CMOS technology and manufacturing method thereof

Abstract

The invention discloses a silicon-based lithium niobate hybrid integrated electro-optic modulator compatible with a CMOS technology. The modulator comprises a silicon substrate wafer with an integrated circuit structure, optical-grade lithium niobate thin film bonded to the upper surface of the silicon substrate wafer, electro-optic modulator optical waveguides of the optical-grade lithium niobatethin film, a metal thin film electrode prepared on the upper surface of the optical-grade lithium niobate thin film and an electrical interconnection structure between the metal thin film electrode and the integrated circuit structure. According to the modulator, the hybrid integration of a silicon-based integrated circuit and the lithium niobate electro-optic modulator is achieved through the conventional CMOS technology, the requirements for integration of optical devices and signal processing modules in the development of next-generation optical communication technologies can be met, performance, size, power consumption, reliability and other indexes of optical modules are further improved, and the manufacturing cost of the optical modules is reduced. The invention further discloses amanufacturing method of the silicon-based lithium niobate hybrid integrated electro-optic modulator compatible with the CMOS technology.

Description

technical field [0001] The invention relates to the technical field of optical fiber sensing and optical fiber communication, in particular to a silicon-based lithium niobate hybrid integrated electro-optical modulator compatible with CMOS technology and a manufacturing method thereof. Background technique [0002] Silicon is an ideal material for manufacturing high-performance, large-scale integrated circuits. However, in the field of integrated optics, there is no material, whether it is an inorganic material, an organic material or a semiconductor material, that can achieve the same huge role as silicon for integrated electronic technology. . At present, photonics technology based on silicon materials is becoming a research hotspot in academia and technology companies, trying to achieve monolithic integration of integrated optical devices such as lasers, modulators, waveguides, and detectors on silicon-based platforms. For modulators, silicon modulators have problems suc...

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to realize the effective interconnection between lithium niobate electro-optic modulator structure and silicon integrated circuit by integrating lithium niobate and silicon through bonding materials.

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