Hybrid led emitters for displays
A luminous body and display technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problem of excessive power, and achieve the effects of wide viewing angle, simple structure, simple structure and process
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Embodiment 1
[0036]The present invention is used for the hybrid LED illuminant of LED electronic display such as figure 1 , figure 2 As shown, it includes: a substrate 01; an epitaxial barrier film layer 02, the epitaxial barrier film layer 02 formed on the substrate 01; pixels: a large number of pixels formed on the epitaxial barrier film layer, wherein each pixel includes a first Sub-pixel 21, second sub-pixel 22, third sub-pixel 23, the first and third sub-pixels correspond to micro ULED11, 13, and are lit by micro ULED11, 13, the second sub-pixel 12 corresponds to OLED12, and are directly lit by OLED12 ; LED controller: selectively control the micro ULED on and off; electrical interface matrix layer 03: directly electrically connected to each OLED. The micro ULED11 corresponding to the first sub-pixel 21 emits blue light in the working state; the second sub-pixel 22 corresponding to the OLED12 emits red light in the working state; the micro ULED13 corresponding to the third sub-pixel...
Embodiment 2
[0038] Such as image 3 As shown, the hybrid LED illuminant for display according to the present invention further includes a ULED interface on the surface of the epitaxial barrier film layer, each ULED interface includes a bottom surface 212 and a side surface 214, and the first electrode formed by the bottom surface of the ULED interface The interface is electrically connected to the LED controller, and the second electrical interface formed by the bottom surface 212 of the ULED interface is electrically connected to the reference voltage; where ULEDs are surface-mounted, and each ULED mounted together includes: a top surface 132, superposed with the bottom surface 212 of the corresponding ULED interface; a bottom surface; a first electrical plug 130 formed on the ULED top surface 132 is connected to the first electrical interface 216 of the corresponding ULED interface; a first electrical plug 130 formed on the ULED top surface The two electrical plugs 504 are connected to ...
Embodiment 3
[0041] GaN is the LED epitaxial barrier layer. In order to reduce the defect density of the electron blocking layer, the electron blocking layer is doped with Al during the growth process, and includes several growth cycles, each cycle includes a first growth stage and A second growth stage, the flow rate of the gallium precursor source in the first growth stage of each cycle corresponds to the first flow rate of the gallium precursor source, and the flow rate of the gallium precursor source in the second growth stage corresponds to the second flow rate of the gallium precursor source, in the first growth stage The first flow rate of the gallium precursor source>the second flow rate of the gallium precursor source in the second growth stage. The growth rate of the first growth stage in one growth cycle in each cycle of the electron blocking layer preparation process is greater than or equal to 6 μm / h, the growth rate of the second growth stage is less than or equal to 2 μm / h, a...
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