Preparation method of interdigitated back contact solar cell

A solar cell, back contact technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex process flow, difficult stability control, etc. Good contact performance

Inactive Publication Date: 2018-05-15
TAIZHOU LERRISOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing interdigitated back-contact solar cells to solve the problem in the prior art that the coating of patterned conductive paste needs to be formed on the emitter of the cell by las

Method used

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  • Preparation method of interdigitated back contact solar cell
  • Preparation method of interdigitated back contact solar cell
  • Preparation method of interdigitated back contact solar cell

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Embodiment

[0030] A method for fabricating interdigitated back-contact solar cells, in which a silicon substrate 4 is dedamaged and cleaned to form a suede structure 8; a local emitter 10 and a back surface field 5 are respectively formed on the back; the front surface is textured ; front surface field 3 preparation; front passivation anti-reflection and back passivation; patterning and forming an electrode paste layer containing conductive components on the back; The electrode paste layer containing conductive components is then subjected to a first heat treatment process and a local laser irradiation process to form local contact, and the order of the first heat treatment process and the second heat treatment process can be exchanged. Effectively reduces the impact of metal recombination on battery performance. In addition, due to the use of laser localized heating, the sintering temperature can be reduced, which can broaden the battery sintering process window, because the passivation ...

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Abstract

The invention provides a preparation method of an interdigitated back contact solar cell. The damage removing and cleaning process is performed on a silicon substrate; a local emitter and a back surface field are formed on the back surface; the front surface is textured; a front surface field is prepared; front passivation antireflection and back passivation are performed; the back surface is patterned so as to form an electrode paste layer including conductive material; the first thermal treatment process is performed; the second thermal treatment process is performed, wherein the laser localirradiation treatment process is used in the second thermal treatment process, and the laser local irradiation treatment process is to perform local irradiation on the electrode paste layer; and theelectrode and the semiconductor are enabled to form local contact through laser local irradiation treatment so that the influence of composite metal on the cell performance can be effectively reduced.The sintering temperature can be reduced, the cell sintering process window can be expanded and the optimal passivation performance and the contact performance can be simultaneously realized so thatthe better cell conversion efficiency can be achieved; and perforating in advance and other complex process flow can be omitted.

Description

technical field [0001] The invention relates to a preparation method of an interdigitated back contact solar cell. Background technique [0002] At present, with the gradual depletion of fossil energy, solar cells are used more and more widely as a new energy alternative. A solar cell is a device that converts the sun's light energy into electrical energy. Solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to extract the carriers, which is beneficial to the effective use of electrical energy. [0003] Interdigitated back contact battery, also known as IBC battery. Among them, IBC refers to Interdigitated backcontact. The biggest feature of the IBC battery is that the emitter and the metal contact are on the back of the battery, and the front is not affected by the shielding of the metal electrode, so it has a higher short-circuit current Jsc, and the back can allow wider metal grid lines to reduce the series resistance Rs. Improv...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/0236H01L31/068H01L31/18
CPCH01L31/02168H01L31/022458H01L31/02366H01L31/0682H01L31/1804H01L31/1864H01L31/1868Y02E10/547Y02P70/50
Inventor 李华靳玉鹏
Owner TAIZHOU LERRISOLAR TECH CO LTD
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