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A Chemical Mechanical Planarization Method for Optimizing Wafer Surface Topography

A planarization method and chemical-mechanical technology, applied in polishing compositions containing abrasives, electrical components, circuits, etc., can solve the influence of wafer mechanical polishing effect, many process parameters and influencing factors, complex interaction mechanism, etc. problems, to achieve excellent mechanical polishing effect, smooth surface morphology of wafers, and strong operability.

Active Publication Date: 2019-09-03
BEIJING SEMICORE PRECISION MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It can be seen that chemical mechanical planarization is a key process to achieve global planarization of various materials in the semiconductor manufacturing process. There are many process parameters and influencing factors (including polishing time, pressure of polishing head, rotating speed of polishing head and polishing disc, flow rate and landing point of polishing liquid components, surface characteristics and morphology of polishing pad, etc.), and the interaction mechanism is complex
If some parameters in the process are unreasonably controlled, it may have a certain impact on the mechanical polishing effect of the wafer itself

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A chemical mechanical planarization method for optimizing wafer surface topography:

[0030] 1) Preparation of polishing solution: SiO 2 Abrasives (400 mesh particle size) take 5g, polyhydroxypolyamine FA / O chelating agent takes 4g, FA / O nonionic surfactant 2g, tin dioxide 5g, oxalic acid 20g, hydrogen fluoride 6g, ammonia water 10g, deionized water 267g is mixed, and after stirring evenly, a polishing liquid for chemical mechanical flat polishing can be obtained, and the pH of the polishing liquid is controlled at 4;

[0031] 2) The polishing liquid is transported to the surface of the polishing pad through an infusion tube, the flow rate of the infusion tube is 100ml / min, and the infusion tube is set radially to the center of the polishing pad.

Embodiment 2

[0033] A chemical mechanical planarization method for optimizing wafer surface topography:

[0034] 1) Preparation of polishing solution: SiO 2 Abrasive (600 mesh particle size) 10g, polyhydroxypolyamine FA / O chelating agent 3g, FA / O nonionic surfactant 3g, tin dioxide (particle size 400 mesh) 10g, butyl 2-phosphonate 15g of alkane-1,2,4-tricarboxylic acid, 4g of ammonium fluorosilicate, 8g of ammonia, and 300g of deionized water are mixed, and after stirring evenly, a polishing liquid for chemical mechanical flat polishing can be prepared. The pH of the polishing liquid Control at 6, then add 0.15wt% hydrogen peroxide to the polishing solution;

[0035] 2) The polishing solution is transported to the surface of the polishing pad by an infusion tube. The flow rate of the infusion tube is 100ml / min. The infusion tube is arranged radially to the center of the polishing pad. According to the channel of the polishing liquid, the polishing liquid is changed from a single-point fall...

Embodiment 3

[0037] A chemical mechanical planarization method for optimizing wafer surface topography:

[0038] 1) Preparation of polishing solution: SiO 2 Abrasive (particle size is 800 mesh) 7g, polyhydroxypolyamine FA / O chelating agent 3g, FA / O nonionic surfactant 3g, tin dioxide (particle size is 500 mesh) 7g, butyl 2-phosphonate Alkane-1,2,4-tricarboxylic acid, 16g of aminotrimethylene phosphonic acid, 5g of ammonium fluorosilicate, 9g of ammonia water, and 300g of deionized water are mixed, and after stirring evenly, a chemical-mechanical flat polishing compound can be obtained. Polishing fluid, the pH of the polishing fluid is controlled at 6, and then 0.3wt% hydrogen peroxide is added to the polishing fluid;

[0039] 2) The polishing solution is transported to the surface of the polishing pad by an infusion tube. The flow rate of the infusion tube is 100ml / min. The infusion tube is arranged radially to the center of the polishing pad. According to the channel of the polishing li...

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PUM

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Abstract

The invention provides a chemical-mechanical planarization method for optimizing surface morphologies of wafers, which comprises the following steps: (A) SiO2 abrasive, polyhydroxy-polyamine FA / O chelating agent, an FA / O nonionic surfactant, stannic oxide, organic acid, fluoride and ammonia are mixed to prepare a polishing solution; (B) in the process of chemical-mechanical planarization, a transfer tube is adopted to transfer the polishing solution to the surface of a polishing pad, the transfer tube is radially arranged pointing to the circle center of the polishing pad, and finally, polishing is carried out. The method disclosed by the embodiment of the invention optimizes the whole operation process by choosing the specifically prepared polishing solution and the transfer tube with a specific structure, consequently, the surface morphology of a water treated by adopting the method disclosed by the invention is smoother, the operability of the whole operating steps is higher, the mechanical polishing effect of the wafer is more excellent, the effect of controlling a reasonable surface removal rate, obviously decreasing the surface roughness of the wafer and increasing the efficiency of polishing can be achieved, and therefore the chemical-mechanical planarization method is worth popularizing and applying widely.

Description

technical field [0001] The invention relates to the field of CMP equipment processing for making chips, in particular to a chemical mechanical planarization method for optimizing wafer surface topography. Background technique [0002] CMP, namely Chemical Mechanical Polishing, chemical mechanical polishing. The equipment and consumables used in CMP technology include: polishing machine, polishing slurry, polishing pad, post-CMP cleaning equipment, polishing end point detection and process control equipment, waste treatment and testing equipment, etc. The concept of CMP technology was first proposed by Monsanto in 1965. The technique was originally used to obtain high-quality glass surfaces, such as military telescopes. In 1988, IBM began to apply CMP technology to the manufacture of 4MDRAM, and since IBM successfully applied CMP to the production of 64MDRAM in 1991, CMP technology has developed rapidly all over the world. Different from traditional pure mechanical or pure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302C09G1/02B24B1/00
CPCB24B1/00C09G1/02
Inventor 岳爽张康尹影李婷杨师
Owner BEIJING SEMICORE PRECISION MICROELECTRONICS EQUIP CO LTD