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structure

A technology of structures and crystalline structures, applied in the field of structures, can solve problems such as insufficient research, and achieve the effect of improving plasma resistance

Active Publication Date: 2021-07-13
TOTO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the aerosol deposition method using yttrium oxyfluoride has not been sufficiently studied

Method used

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Embodiment Construction

[0047] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same reference numerals are given to the same components in each drawing, and detailed description thereof will be appropriately omitted.

[0048] figure 1 It is a cross-sectional view illustrating a member having the structure according to the embodiment.

[0049] Such as figure 1 As shown, the component 10 is, for example, a composite structure having a substrate 15 and a structure 20 .

[0050]The member 10 is, for example, a member for a semiconductor manufacturing device having a cavity, and is provided inside the cavity. Since plasma is generated by introducing gas into the chamber, plasma resistance is required in the member 10 . In addition, the member 10 (structure 20 ) may be used outside the cavity, and the semiconductor manufacturing apparatus includes any semiconductor manufacturing apparatus (semiconductor processing apparatus) subjected...

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Abstract

The technical problem to be solved by the present invention is to provide a structure that includes yttrium oxyfluoride and can improve plasma resistance. Specifically, it is to provide the following structure: polycrystals of yttrium oxyfluoride having a rhombohedral crystal structure as the main component, and the average crystal size in the polycrystals are less than 100 nm, characterized in that, by X-ray Diffraction The peak intensity of the rhombohedral crystal detected near the diffraction angle 2θ=13.8° is r1, the peak intensity of the rhombohedral crystal detected near the diffraction angle 2θ=36.1° is r2, and the ratio γ1 is γ1(%)=r2 When / r1×100, the ratio γ1 is 0% or more and less than 100%.

Description

technical field [0001] Modes of the invention generally involve structures. Background technique [0002] As a member used in a plasma irradiation environment such as a semiconductor manufacturing apparatus, a member having a film having high plasma resistance formed on its surface can be used. Aluminum oxide (Al 2 o 3 ), yttrium oxide (Y 2 o 3 ) or nitrides such as aluminum nitride (AlN). [0003] On the other hand, in oxide-based ceramics, the fluorination caused by the reaction with the CF-based gas causes the volume of the film to expand, cracks, etc., resulting in the generation of particles, and it has been proposed to use the fluorinated ceramics. Yttrium fluoride (YF 3 ) and other fluoride-based ceramics (Patent Document 1). [0004] In addition, YF 3 The resistance to F-type plasma is high, but the resistance to Cl-type plasma is insufficient or there are doubts about the chemical stability of fluoride. For this purpose, it has also been proposed to use a fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/553C04B35/622C04B35/624
CPCC04B35/553C04B35/62222C04B35/624C04B2235/78C04B2235/781C04B2235/9638C01P2002/72C01P2002/74C01P2004/39C01P2004/64
Inventor 芦泽宏明清原正胜
Owner TOTO LTD
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