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Microwave detection component and microwave detector

A technology of microwave detection and components, which is applied in the field of microwave detection, can solve problems such as limited use range, and achieve the effects of high signal-to-noise ratio, low power consumption, and high sensitivity

Active Publication Date: 2018-05-25
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, high-sensitivity microwave detection can be achieved by using superconducting bolometers, but this instrument can only work at low temperature, which greatly limits its application range

Method used

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  • Microwave detection component and microwave detector
  • Microwave detection component and microwave detector
  • Microwave detection component and microwave detector

Examples

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Embodiment 1

[0039] refer to figure 1 , this embodiment discloses a microwave detection element, which includes an insulating layer 11 and a first magnetic layer 121 arranged in layers; the insulating layer 11 and the first magnetic layer 121 are directly attached together; When a bias voltage is applied to the element, the insulating layer 11 will induce the bias voltage, and the interface of the insulating layer 11 adjacent to the first magnetic layer 121 will undergo stress deformation and act on the first magnetic layer 121. The first magnetic layer 121 The magnetic properties of the ions are changed, that is, the first magnetic layer 121 is modulated by the electric field for microwave detection.

[0040] In the microwave detection element of this embodiment, the above-mentioned electric field regulation mechanism is called stress regulation.

[0041] In the present embodiment, since the microwave detection element is a double-layer structure with only one magnetic layer, its magneto...

Embodiment 2

[0048] refer to image 3 As shown, Embodiment 2 discloses a microwave detection element, which includes a first magnetic layer 121 , an insulating layer 11 and a second magnetic layer 122 which are arranged in layers.

[0049] It should be noted that, in the microwave detection element of this embodiment, the mechanism of electric field regulation is specifically interface regulation. Specifically, the bias voltage is applied through two pieces of metal electrodes (not shown in the figure) attached to the two sides of the first magnetic layer 121 and the second magnetic layer 122 respectively; when the bias voltage is applied to the microwave detection element , the insulating layer 11 generates an electric field, and this part of the electric field only acts on a few atomic layer thick regions of the interface between the first magnetic layer 121 and the insulating layer 11 due to the shielding effect of free electrons, and affects the first magnetic layer 121. Magnetic prop...

Embodiment 3

[0061] In the description of Embodiment 3, the similarities with Embodiment 2 will not be repeated here, and only the differences with Embodiment 2 will be described. Specific reference Image 6 As shown, the difference between Embodiment 3 and Embodiment 2 is that the thickness of the insulating layer 11 is 0.5 nm to 5 nm, and the material of the insulating layer 11 is selected from Al 2 O 3 and at least one of MgO; the thickness of the first magnetic layer 121 does not exceed 2 nm.

[0062] In this embodiment, a non-magnetic metal layer 13 is also preferably disposed on the insulating layer 11; that is, the microwave detection element disclosed in this embodiment includes a first magnetic layer 121, an insulating layer 11 and a non-magnetic layer 121, which are stacked in sequence. Magnetic metal layer 13 .

[0063] Specifically, the thickness of the non-magnetic metal layer 13 is 5 nm, and the material of the non-magnetic metal layer 13 is selected from at least one of C...

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Abstract

The invention discloses a microwave detection component. The microwave detection component comprises an insulation layer and a first magnetic layer arranged opposite to the insulation layer. When a bias voltage is applied to the insulation layer, an interface of the insulation layer adjacent to the first magnetic layer generates an electric field or stress deformation to change magnetism of the first magnetic layer. The microwave detection component is based on electric field regulation and control, and the anisotropy magnetoresistance effect or the giant magnetoresistance effect is utilized to realize microwave detection. According to the microwave detection component, in the microwave detection process, the electric field but not the current effect is employed, power consumption of devices can be effectively reduced, properties of small size, low power consumption and high sensitivity are realized, microwave detection with the high signal to noise ratio can be realized, moreover, operation under the normal temperature can be realized, a detection mode is not limited, and the microwave detection component can be widely applied to the microwave energy transmission and multipath communication fields. The invention further discloses a microwave detector equipped with the microwave detection component.

Description

technical field [0001] The invention belongs to the technical field of microwave detection, and in particular relates to a microwave detection element and a microwave detector. Background technique [0002] Microwave detector is a rectifier circuit system that converts AC signal into DC signal and then detects microwave signal. It has a wide range of applications in telecommunication, electronic industry, scientific research and other fields. In electronic communication systems, it is often necessary to detect the presence or strength of microwave signals as a standard for normal operation. For example, the strength of the received signal is usually measured in a radio receiver to adjust the automatic gain control circuit to continuously obtain the desired output signal from the receiver, so microwave detectors form the core of the signal amplitude measurement system. At present, Schottky diodes or PN junction diodes are mainly used as components of microwave detectors; com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/00H01L43/08H10N50/10
CPCH10N50/00H10N50/10
Inventor 方彬唐伟罗鑫熊荣欣蔡佳林曾中明张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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