Preparation method of metal grid membrane

A metal mesh and metal technology, applied in the field of metal mesh film preparation, can solve the problems of difficult control of metal nanowire coating or mesh assembly process, complicated steps, complex metal nanowires, etc., and achieve accurate optical transmittance controllable effect

Inactive Publication Date: 2018-06-01
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the preparation method of metal grid film generally adopts the template method, such as photolithography technology and other polymer templates, etc., and the commonly used photolithography method strongly depends on the corresponding photolithography preparation, and high-end The etching equipment is extremely expensive and the steps are complicated
In addition, the preparation of metal nanowires can also be used to assemble and prepare metal grids, but the preparation of metal nanowires is also a complex process that requires fine control, and the coating or grid assembly process of metal nanowires is also difficult to control

Method used

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  • Preparation method of metal grid membrane
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  • Preparation method of metal grid membrane

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Embodiment Construction

[0027] The present invention provides a method for preparing a metal mesh film, which includes the following steps:

[0028] S1, such as figure 1 As shown, a uniform single-layer polystyrene microsphere colloidal crystal 2 is prepared on the surface of the substrate 1 using the vertical immersion self-assembly method, the direct dropping method of polystyrene emulsion, the spin coating method of polystyrene emulsion, or the LB interface method; Use ITO glass substrate or flexible conductive substrate;

[0029] S2, combine figure 2 versus image 3 As shown, the substrate 1 treated in step S1 is used as the cathode, the metal 3 to be plated is used as the anode, the salt solution of the metal is used as the electroplating solution 4, the electrochemical deposition process is adopted, and the single-layer polystyrene microsphere colloid Crystal 2 is a template for depositing a metal layer 5 on the surface of the substrate;

[0030] The metal to be plated can be copper, aluminum, zinc,...

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Abstract

The invention discloses a preparation method of a metal grid membrane. The method comprises steps as follows: S1, uniform single-layer polystyrene microsphere colloidal crystals are prepared on the surface of a substrate; S2, the substrate treated in S1 is taken as a cathode, a plated metal is taken as an anode, a saline solution of the metal is taken as an electroplating solution, and a metal layer is deposited on the surface of the substrate with the single-layer polystyrene microsphere colloidal crystals as a template; S3, the single-layer polystyrene microsphere colloidal crystals are removed, and the metal layer remaining on the surface of the substrate is the metal grid membrane. During electrochemical deposition, ionized metal ions are deposited between gaps of single-layer polystyrene microsphere colloidal crystals, the deposition thickness of the metal layer can be controlled by adjusting the deposition time and deposition current density, and the metal grid membrane can be obtained after the template is removed; the size of polystyrene microspheres is changed as required, that is, the mesh size of the metal grid membrane can be changed, so that the optical transparency ofthe metal grid membrane is accurate and controllable.

Description

Technical field [0001] The invention relates to the technical field of transparent conductive film manufacturing, in particular to a method for preparing a metal grid film. Background technique [0002] Metal mesh film is a kind of transparent conductive film that has attracted much attention. It has very strong practicability. Unlike conventional transparent conductive films such as ITO, FTO, and AZO, these traditional transparent conductive films have their own inherent defects. For example, the brittleness of ITO makes it difficult to bend, and the conductivity of AZO is relatively low. At present, it cannot replace the market position of ITO. It can only be used in some specific fields such as the electrode of copper indium gallium selenide solar thin-film batteries, so research People have been looking for a substitute with excellent optoelectronic properties that can be used in various required fields. [0003] Metal mesh film overcomes many of the above defects due to its u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D1/10C25D3/38H01B13/00
CPCC25D1/006C25D1/10C25D3/38H01B13/00
Inventor 彭寿汤永康马立云金良茂甘治平李刚
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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