Crucible device for growing aluminum nitride single crystals by physical gas phase transmission method

Abstract

The invention discloses a crucible device for growing aluminum nitride single crystals by a physical gas phase transmission method. The crucible device comprises a crucible body, a crucible cover, a seed crystal table and a flow guide heating cover, wherein the crucible body is used for containing an aluminum nitride powder source / aluminum nitride sintering body; the crucible cover is arranged onthe top of the crucible body; the seed crystal table is arranged in the crucible body and is positioned under the crucible cover; the flow guide heating cover is arranged under the seed crucible tableand gradually and radially opens downside in a direction away from the seed crystal table; the flow guide heating cover is used for conducting the heat to the edge of the seed crystal table, so thatthe edge temperature of the seed crystal table is greater than the center temperature of the seed crystal table. The crucible device for growing aluminum nitride single crystals has the advantages that through the arrangement of the flow guide heating cover, the temperature at the edge of the seed crystal table is higher than the temperature in the center of the seed crystal table; the polycrystalformation at the edge of the seed crystal table is effectively inhibited; the center temperature of the seed crystal table is relatively low; the favorable conditions are provided for the AlN singlecrystal growth induced by seed crystals; through the flow guide heating cover, gas is integrally transmitted to the center position of the seed crystal table; the polycrystal formation around the seedcrystals is effectively inhibited.

Description

technical field [0001] The invention relates to a crucible device for growing aluminum nitride single crystal by physical vapor transport method. Background technique [0002] The third-generation semiconductor material, aluminum nitride (AlN), has a bandgap width of 6.2eV, has unique advantages in the ultraviolet / deep ultraviolet light-emitting band, and is one of the best substrate materials for ultraviolet LEDs. At the same time, because of its high breakdown field strength, high saturation electron drift rate, and high thermal conductivity and radiation resistance, AlN can also meet the design requirements of high temperature / high frequency / high power electronic devices. Biology, medical treatment, communication, detection, environmental protection and other fields have great application potential. [0003] It is hardly soluble in any liquid, and its melting point is above 2800°C, so it cannot be obtained by traditional solution method and melt method. Taking advantage...

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Problems solved by technology

And because the crystal needs to be removed from the seed crystal table after the experiment, it is easy to cause damage to the seed crystal table, which is not conducive to the repeated use of the seed crystal table and increases the manufacturing cost. Therefore, designing a suitable crucible device is very important for growing high-quality AlN single crystals

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