Circular large-dimension IGBT chip crimping packaging structure and manufacturing method

Abstract

The invention discloses a circular large-dimension IGBT chip crimping packaging structure and a manufacturing method. The circular large-dimension IGBT chip crimping packaging structure comprises an emitting electrode end cover, emitting electrode molybdenum sheets, a gate spring needle assembly, gate metal, an emitting electrode molybdenum sheet positioning frame, flexible conductive metal thin sheets, emitting electrode metal, an IGBT chip, collector electrode metal, collector electrode molybdenum sheets with positioning holes, a collector electrode end cover and the like which are arrangedfrom the top to bottom in sequence. By adopting the crimping packaging structure, a fault sector region isolation method is simple, so that only the fault region sector conductive molybdenum sheets need to be changed into insulating sheets, and the gate metal specific connecting position on the surface of the chip is cut off; a device is subjected to two-sided heat dissipation through the collector electrode end cover and the emitting electrode end cover; metal bonding wires and a welding interface are omitted, so that the bottleneck of conventional device bonding point and welding layer fatigue failure can be eliminated, and relatively high resistance to thermal mechanical fatigue can be achieved; the interior of the device adopts symmetrical structural design, so that stray inductance ofeach sector region in the interior can be lowered, the stray inductance distribution can be consistent, the parasitic parameter of a module can be reduced, and the electrical performance of the device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a circular large-size IGBT chip crimping package structure and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a power electronic device that combines the advantages of metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors. IGBT is known for its excellent performance It has been widely used and greatly improved the performance of power electronic devices and systems. [0003] With the continuous expansion of the application field, the performance requirements for IGBT devices are getting higher and higher, and the existing technology has the following defects: 1. On the one hand, it is required to increase the power level of the device, and the traction of high-power electric locomotives, power transmission and transformation systems , new energy, national defense heavy ind...

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to address the above problems, to provide a circular large-size IGBT chip crimping package structure and manufacturing method, to solve the existing IGBT crimping package structure needs to cut the chips on the entire wafer, and detect and select Afterwards, separate glue injection and then packaging, the operation is complicated, the assembly requirements are high, and the stray parameters are obviously affected, which is conducive to expanding the power level of a single device

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