Method for preparing HfS2/h-BN heterojunction material by selective patterning

Abstract

The invention provides a method for preparing an HfS2 / h-BN heterojunction material by selective patterning. The method comprises the following steps of 1, transferring an h-BN crystal domain or a thinfilm material to a target substrate; 2, performing target patterning photoetching on h-BN transferred onto the target substrate; 3, annealing the h-BN substrate under an oxygen atmosphere to remove an organic matter resided on a surface of the h-BN; and 4, growing an HfS2 atomic crystal on a surface of the h-BN substrate after annealing is completed, and selectively preparing the HfS2 / h-BN heterojunction material. The HfS2 / h-BN heterojunction material is simple in preparation process, low in cost and high in controllability, and importance significance is brought to mass integrated productionand application of an HfS2 / h-BN material-based photoelectric device.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for selectively patterning and preparing hafnium disulfide boron nitride heterojunction materials. Background technique [0002] In recent years, in electronics and optoelectronics, due to the zero bandgap characteristics of graphene, its poor light absorption ability and low switching ratio limit its further application. Therefore, people have turned their research focus to transition metal chalcogenides (TMDs, MX 2 , M is a transition metal such as Mo, Hf, etc., X is S, Se, etc.). The material has many excellent physical properties. First, TMDs have a natural band gap that graphene materials lack. Furthermore, TMDs have a photoluminescence phenomenon, which provides unlimited possibilities for their application in optoelectronic devices. In addition, TMDs have good flexibility and transparency, and single-layer TMDs field-effect transistors have gr...

AI Technical Summary

Problems solved by technology

[0005] But currently about HfS 2 There are still many problems to be solved in the research of / h-BN heterojunction materials

Especially in the lack of exploration on material growth, HfS prepared by mechanical exfoliation 2 / h-BN heterojunction materials have problems such as small sample size, uncontrollable material thickness, and strong randomness in the preparation process, which largely limits its large-scale integrated production

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