Ga-doped InP quantum dot with core-shell structure and preparation method of Ga-doped InP quantum dot

A quantum dot and shell structure technology, applied in the field of Ga-doped InP quantum dots and their preparation, can solve the problems of increased defects, defects between core-shell interfaces, wide half-peak width, etc., and achieves the effect of simple operation

Active Publication Date: 2018-07-03
SUZHOU XINGSHUO NANOTECH CO LTD
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Problems solved by technology

And as the quantum dot particle size increases, its defects increase, that is, the larger the fluorescence emission peak, the larger the half-peak width
In addition, InP quantum dots with a shell coating, such as InP / ZnS, have a lattice mismatch rate of about 8% between the crystal core and the bulk material of the shell layer. Pure InP / ZnS core-shell quantum dots, Defects at the core-shell interface are hard to avoid

Method used

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  • Ga-doped InP quantum dot with core-shell structure and preparation method of Ga-doped InP quantum dot

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[0033] In order to obtain quantum dots with the above structure, the present invention also discloses a method for preparing Ga-doped InP quantum dots with a core-shell structure, comprising the following steps: 1) adding an indium precursor to a compound containing the first ligand In an organic solvent, heat to 180-260 ° C, add PH 3 , to obtain a mixed system with InP nanocrystalline nuclei; 2) adding the indium precursor and the gallium precursor to the organic solvent containing the second ligand, heating to dissolve, and obtaining a mixed precursor solution of indium and gallium; 3) adding Mix precursor solution and pH in step 2) 3 Add to the mixing system in step 1) in turn to form a Ga-doped InGaP nanocrystalline intermediate layer; 4) Add the precursor substances required for the shell layer of the synthetic quantum dot to obtain a Ga-doped InP quantum dot with a core-shell structure point; the composition of the Ga-doped InGaP nanocrystalline interlayer is In x Ga ...

Embodiment 1

[0059] Preparation of Ga-doped InP quantum dots with core-shell structure sample 1

[0060] (1) Preparation of indium oleate (In-OA): add indium acetate, oleic acid and 1-octadecene to a three-necked flask, heat to dissolve, and obtain a clear and transparent solution of In-OA with a concentration of 0.1M;

[0061] (2) Preparation of gallium oleate (Ga-OA): add gallium chloride, oleic acid and 1-octadecene in a three-necked flask, heat to dissolve, and obtain a Ga-OA clear and transparent solution with a concentration of 0.1M;

[0062] (3) preparation of zinc oleate (Zn-OA): add zinc acetate, oleic acid and 1-octadecene in there-necked flask, heat to dissolve, obtain the Zn-OA clear and transparent solution that concentration is 0.5M;

[0063] (4) Preparation of indium oleate and gallium oleate mixture (In-OA+Ga-OA): Mix the prepared In-OA and Ga-OA in (1) and (2) in equal proportions, heat and stir until well mixed;

[0064] (5) Preparation of Ga-doped InP quantum dots with...

Embodiment 2

[0072] Preparation of Ga-doped InP quantum dots with core-shell structure sample 3

[0073] Add In(OAc) to the three-necked flask 3 (300mg), Zn(OAc) 2 (100 mg), tetradecanoic acid (700 mg) and 1-octadecene (10 mL), heated to dissolve, bubbled with N 2 , the reaction was maintained for 120 min to obtain a clear and transparent solution. Continue to heat to 230 ° C, pass a certain amount of PH 3 Gas, reacted for 30min, dripped 1mL of the In-OA+Ga-OA solution obtained in the step (4) of Example 1 into the solution, reacted for 30min, and then slowly introduced a certain amount of PH 3 gas, and react for 30 min. Then, 2mL of In-OA+Ga-OA solution obtained in step (4) in Example 1 was added dropwise to the solution for the second time, reacted for 30min, and then slowly introduced a certain amount of PH 3 gas, and react for 30 min. For the third time, 3 mL of the In-OA+Ga-OA solution obtained in step (4) in Example 1 was added dropwise to the solution, reacted for 30 min, and ...

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Abstract

The invention provides a Ga-doped InP quantum dot with a core-shell structure and a preparation method of the Ga-doped InP quantum dot. The quantum dot comprises an InP nano-crystal core, a Ga-doped InGaP nanocrystalline middle layer and a shell layer, wherein the constitution of the Ga-doped InGaP nanocrystalline middle layer is InxGayP, and the constitution of the shell layer is ZnSezS(1-z), x / yis more than or equal to 1 and less than or equal to 9, and z is more than or equal to 0 and less than or equal to 1. The fluorescent emission wavelength of the quantum dot is continuous and adjustable in 610nm-780nm, particle sizes are uniform, and the half band width of an emission peak is obviously smaller than that of a pure InP quantum dot with the same wavelength. PH3 is taken as a phosphorus source, and the Ga-doped InGaP nanocrystalline middle layer is formed between the nano-crystal core and the shell layer, so that the defects caused due to the mispairing of crystal lattices of theInP quantum dot are relieved; and the Ga-doped InP quantum dot has the characteristics of low cost, environmental friendliness and simplicity in operation and can be widely applied to the fields of illumination, display and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterial preparation, in particular to a Ga-doped InP quantum dot with a core-shell structure and a preparation method thereof. Background technique [0002] Quantum dots, a class of inorganic semiconductor luminescent nanocrystals with obvious quantum size effects and unique optical properties, have attracted widespread attention due to their potential applications in lighting, display, solar energy, and biomarkers. In recent years, the development and application of quantum dots have mainly focused on cadmium-containing quantum dot systems, which are mainly due to the high quantum yield and stable optical properties of such quantum dots. As we all know, cadmium is a highly toxic heavy metal that can cause great harm once ingested by the human body. Therefore, there are very strict regulations on the use of cadmium-containing materials at home and abroad, which undoubtedly limits the a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02
CPCC09K11/02C09K11/883
Inventor 张卫张超王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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