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Light emitting element, light emitting device, electronic device, display device, and illuminating device

A light-emitting element and light-emitting layer technology, which is applied in the field of lighting devices, machines, programs, products or compositions, can solve the problems of widening of the half-width of light emission and unfulfilled color purity, and achieve long service life, low power consumption, Good effect of luminous efficiency

Inactive Publication Date: 2018-07-03
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, when the particle size of a QD is not uniform, its emission half-width becomes broad, and thus the color purity satisfying the above-mentioned standard has not been achieved so far.

Method used

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  • Light emitting element, light emitting device, electronic device, display device, and illuminating device
  • Light emitting element, light emitting device, electronic device, display device, and illuminating device
  • Light emitting element, light emitting device, electronic device, display device, and illuminating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0078] Metal halide perovskite materials are materials composed of organic materials and inorganic materials or composed of only inorganic materials, and have interesting characteristics such as exciton emission and high mobility of carriers (hereinafter, the material is referred to as are metal halide perovskite materials). In particular, a metal halide perovskite material forming a superlattice structure in which inorganic layers (also called perovskite layers) and organic layers are alternately stacked has a quantum well structure, and its exciton binding energy is very large, Excitons can thus exist stably. In addition, the metal halide perovskite material exhibits exciton emission with narrow half-width and small Stokes shift, and thus is expected to be applied to light-emitting devices. In addition, quantum dots of known metal halide perovskite materials also exhibit luminescence with a very narrow half-width and good color purity.

[0079] In addition, metal halide pe...

Embodiment approach 2

[0179] In this embodiment mode, a light-emitting device using the light-emitting element described in Embodiment Mode 1 will be described.

[0180] refer to Figure 4A and Figure 4B A light emitting device according to one embodiment of the present invention will be described. Figure 4A is the top view of the light emitting device, Figure 4B is along Figure 4A Cross-sectional views of A-B and C-D cut in. This light-emitting device includes a driver circuit unit (source line driver circuit) 601 , a pixel unit 602 , and a driver circuit unit (gate line driver circuit) 603 indicated by dotted lines as a unit for controlling light emission of the light-emitting element. In addition, reference numeral 604 is a sealing substrate, reference numeral 605 is a sealing material, and the inside surrounded by the sealing material 605 is a space 607 .

[0181] The lead wiring 608 is a wiring for transmitting signals input to the source line driver circuit 601 and the gate line driv...

Embodiment 1

[0253] In this example, the manufacturing method and characteristics of the light-emitting element 1 according to one embodiment of the present invention and the comparative light-emitting element 1 will be described in detail.

[0254] (Manufacturing method of light-emitting element 1)

[0255] First, the anode 101 is formed by forming indium tin oxide (ITSO) including silicon oxide on a glass substrate by a sputtering method. Its thickness is 70nm, and the electrode area is 2mm×2mm.

[0256] Next, as a pretreatment for forming a light-emitting element on the substrate, the surface of the substrate was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds.

[0257]Then, the substrate was fixed to the substrate holder of the spin coater so that the surface on which the anode 101 was formed was facing upward, and the anode 101 was coated with poly(3,4-ethylenedioxythiophene) / poly(styrene Sulfonic acid) (PEDOT / PSS) solution (H...

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Abstract

The invention provides a novel light emitting element with good light emitting efficiency or good color purity. The provided light emitting element comprises an anode, a cathode, and a layer containing a light emitting substance. The layer is arranged between the anode and the cathode. The layer comprises a light emitting layer and an electron transmission layer. The light emitting layer contactswith the electron transmission layer. The electron transmission layer is arranged between the light emitting layer and the cathode. The light emitting layer comprises a metal halide-perovskite material represented by a formula (SA)MX3, (LA)2(SA)<n-1>M<n>X<3n+1>, or (PA)(SA)<n-1>M<n>X<3n+1>. The electron transmission layer comprises 1,10-phenanthroline derivatives, wherein at least one of 2nd or 9th of the skeleton of 1,10-phenanthroline has a substituent.

Description

technical field [0001] One aspect of the present invention relates to a light emitting element, a display module, a lighting module, a display device, a light emitting device, electronic equipment, and a lighting device. Note that one aspect of the present invention is not limited to the technical fields described above. The technical field of one aspect of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a program (process), machine (machine), product (manufacture), or composition (composition of matter). Therefore, specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light emitting devices, lighting devices, power storage devices, storage devices, imaging Devices, their driving methods, and their manufacturing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K85/111H10K85/30H10K50/115H10K85/6572H10K50/16H10K59/12H10K59/17H10K85/1135H10K50/11H10K85/50C09K11/06C09K2211/1029H10K85/654H10K50/171H10K50/166H10K71/00H10K71/13H10K2102/00
Inventor 广濑智哉濑尾哲史筒井哲夫
Owner SEMICON ENERGY LAB CO LTD