Whole chip structure of electroabsorption modulated laser and its manufacturing and testing method
An electro-absorption modulation and laser technology, which is applied to the device for controlling the output parameters of the laser, the structure of the optical waveguide semiconductor, the laser, etc., can solve the problem of no specific structure description of the laser light output, and achieve fast diagnosis and collection, improved effectiveness, The effect of improving test accuracy
Active Publication Date: 2020-02-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, in these EFT researches, there is neither awareness nor specific structural instructions on how to effectively realize the light output of the laser in the whole chip test. edge-emitting laser products are also not covered
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[0042] The invention adopts EFT technology to engrave grooves around EML device units to generate trench sidewall mirror surfaces and trench bottom anti-reflection surfaces, and also adopts whole wafer coating technology to coat anti-reflection dielectric films on the front end of EML device units face (front face on the modulator side) and high reflection dielectric film on the rear face (the rear face on the laser side) of the EML device unit, thus realizing the on-line whole-chip coating, testing, screening and Full slicing, thus avoiding the cleavage and coating of each bar and chip, greatly improving the efficiency, and stabilizing the device performance and repeatability.
[0043] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.
[0044] In a specific embodiment of the present invention, a m...
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The invention provides a whole structure of an eroabsorption modulated laser (EML) integrated device and a manufacturing test method thereof, and belongs to the field of semiconductor optoelectronics.The whole structure of the EML integrated device is a grid structure, and the multiple quantum wells (MQW) of the laser and the MQW of the modulator are epitaxially grown on a wafer. An EML device unit includes a laser MQW and a modulator MQW arranged in an array; a trench structure is disposed around the EML device unit, and the sidewall surface of the trench structure is a mirror surface and the bottom portion thereof is an anti-reflection surface; the front / rear end faces of the device unit are respectively formed with a reduction / high reflective dielectric film, and the front / rear end faces are end faces at one side of the modulator MQW / laser MQW. The whole structure is tested without the need for bar cleavage, and the combination of the trench sidewall mirror surface and the trench bottom anti-reflection surface (further reduction / high reflective dielectric film and anti-reflection surface combination) is used to realize the effective light output of the EML device unit, which not only makes the test data diagnosis and collection faster, but also reduces the manufacturing cost of the EML integrated device.
Description
technical field [0001] The invention belongs to the field of semiconductor optoelectronics, and in particular relates to a whole-chip structure of an electro-absorption modulated laser integrated device and a manufacturing and testing method thereof, in particular to a high-performance low-cost electro-absorption modulated laser capable of realizing online whole-chip coating, testing and screening Integrated device and method of making and testing the same. Background technique [0002] Electro-absorption modulated laser (EML: electro-absorption modulated laser) is an integrated device of distributed feedback (DFB: distributed feedback) laser and electro-absorption modulator (EAM: Electro-Absorption Modulator). However, it is an edge-emitting photonic integrated device. Compared with surface-emitting optical devices, it is still not possible to realize the whole-chip fabrication, detection and screening of devices. The reason is that the light output position of the edge-em...
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IPC IPC(8): H01S5/06H01S5/34H01S5/22H01S5/042
CPCH01S5/0425H01S5/0601H01S5/22H01S5/34
Inventor 黄永光张瑞康王宝军朱洪亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI