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Alkali halide-doped perovskite light-emitting diode and fabrication method thereof

A technology of alkali metal halides and light-emitting diodes, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as slow charge transfer efficiency, improve film morphology, improve device efficiency, and reduce costs Effect

Inactive Publication Date: 2018-07-10
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a perovskite light-emitting diode doped with an alkali metal halide and a preparation method thereof, to solve the problem of slow charge transfer efficiency between two-dimensional perovskite crystal planes, and to simultaneously emit light High-efficiency and low-cost all-inorganic perovskite thin films as active light-emitting layers to improve the luminous efficiency of perovskite light-emitting diodes

Method used

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  • Alkali halide-doped perovskite light-emitting diode and fabrication method thereof
  • Alkali halide-doped perovskite light-emitting diode and fabrication method thereof
  • Alkali halide-doped perovskite light-emitting diode and fabrication method thereof

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Embodiment 1

[0069] This embodiment provides an alkali metal halide-doped perovskite light-emitting diode, including an anode substrate 1 (thickness is 150nm), a hole transport layer (thickness is 40nm), an active light emitting diode arranged in sequence from bottom to top. Layer 4 (thickness is 40nm), electron transport layer 5 (thickness is 40nm), cathode modification layer 6 (thickness is 1nm) and cathode 7 (thickness is 100nm), wherein the hole transport layer comprises hole transport layer I 2 and hole Hole transport layer II 3. Its preparation method is as follows:

[0070] Using dimethyl sulfoxide (DMSO) as solvent to prepare perovskite precursor solution doped with alkali metal bromide, including perovskite precursors CsBr and PbBr 2 And the alkali metal bromide NaBr, the molar ratio of the three is CsBr:NaBr:PbBr 2 =1:0.1:1, CsBr and PbBr in the precursor solution 2 The optimal concentration is 0.2M, and the concentration of NaBr is 0.1M.

[0071] Dissolve TFB in chlorobenzen...

Embodiment 2

[0080] This embodiment provides an alkali metal halide-doped perovskite light-emitting diode, including an anode substrate 1 (thickness is 150nm), a hole transport layer (thickness is 40nm), an active light emitting diode arranged in sequence from bottom to top. Layer 4 (thickness is 40nm), electron transport layer 5 (thickness is 40nm), cathode modification layer 6 (thickness is 1nm) and cathode 7 (thickness is 100nm), wherein the hole transport layer comprises hole transport layer I 2 and hole Hole transport layer II 3. Its preparation method is as follows:

[0081] Using dimethyl sulfoxide (DMSO) as solvent to prepare perovskite precursor solution doped with alkali metal bromide, including perovskite precursors CsBr and PbBr 2 And the alkali metal bromide KBr, the molar ratio of the three is CsBr:KBr:PbBr 2 =1:0.1:1, precursor solution CsBr and PbBr 2 The optimal concentration is 0.2M, and the concentration of KBr is 0.1M.

[0082] Dissolve TFB in chlorobenzene to confi...

Embodiment 3

[0090] This embodiment provides an alkali metal halide-doped perovskite light-emitting diode, including an anode substrate 1 (thickness is 150nm), a hole transport layer (thickness is 40nm), an active light emitting diode arranged in sequence from bottom to top. Layer 4 (thickness is 40nm), electron transport layer 5 (thickness is 40nm), cathode modification layer 6 (thickness is 1nm) and cathode 7 (thickness is 100nm), wherein the hole transport layer comprises hole transport layer I 2 and hole Hole transport layer II 3. Its preparation method is as follows:

[0091] Using dimethyl sulfoxide (DMSO) as solvent to prepare perovskite precursor solution doped with alkali metal bromide, including perovskite precursors CsBr and PbBr 2 And the alkali metal bromide RbBr, the molar ratio of the three is CsBr:RbBr:PbBr 2 = 1:0.1:1, CsBr and PbBr 2 The optimal concentration is 0.2M, and the concentration of RbBr is 0.1M.

[0092] Dissolve TFB in chlorobenzene to configure a precurso...

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Abstract

The invention relates to an alkali halide-doped perovskite light-emitting diode. The alkali halide-doped perovskite light-emitting diode comprises a substrate, a hole transmission layer, an active light-emitting layer, an electron transmission layer, an electrode modification layer and an electrode, wherein the thickness of the active light-emitting layer is 5-100 nanometers, the active light-emitting layer comprises perovskite and an alkali halide doped in the perovskite, the molecular formula of the perovskite is one or more of CsPbCl<x>Br<3-x>, CsPbBr<x>I<3-x>, MAPbCl<x>Br<3-x>, MAPbBr<x<I<3-x>, FAPbCl<x>Br<3-x> and FAPbBr<x>I<3-x>, x is equal to 0, 1, 2 or 3, and the alkali halide is one or more of LiCl, NaCl, KCl, RbCl, LiBr, NaBr, KBr, RbBr, LiI, NaI, KI and RbI. The invention also provides a fabrication method of the alkali halide-doped perovskite light-emitting diode. The fabrication method comprises the steps of forming the hole transmission layer or the electron transmissionlayer o the substrate; modifying an alkali halide-containing perovskite precursor solution used as the active light-emitting layer on the hole transmission layer of the electron transmission layer; sequentially forming the electron transmission layer, a negative electrode modification layer and a negative electrode on the active light-emitting layer or sequentially forming the hole transmission layer, a positive electrode modification layer and a positive electrode on the active light-emitting layer; and performing package.

Description

technical field [0001] The invention relates to the technical field of photoelectric devices, in particular to an alkali metal halide-doped perovskite thin-film light-emitting diode and a preparation method thereof. Background technique [0002] With the development of human civilization, display technology plays an increasingly important role in people's production and life, and human beings' demand for display performance continues to increase with the development of the times. In this regard, display devices are required to have high resolution, high color purity and realize more realistic colors. In order to realize this function, the luminescent material is required to have a narrow emission peak width, high luminous efficiency, and the color emission can be continuously adjusted in the visible band (400-780nm). The emission peak width and luminous efficiency are measured by the emission peak width at half maximum (FWHM) and luminescence quantum efficiency (PLQY), resp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/00H10K50/16H10K50/805H10K50/84H10K71/00
Inventor 孙宝全宋涛吴晨
Owner SUZHOU UNIV
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